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TBP18S030MJ

Texas Instruments

TBP18S030MJ by Texas Instruments

TBP18S030MJ by Texas Instruments is a 256-bit OTP ROM with 32x8 organization, operating at 5V. It features a max access time of 50ns and operates in parallel mode. Ideal for military-grade applications requiring fast and reliable non-volatile memory storage.

Median Price

$125.840

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 1 parts In-Stock

1+ parts

$125.840

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$125.840

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 10 parts In-Stock

1+ parts

$28.990

100+ parts

$30.440

1k+ parts

$28.700

10k+ parts

-

10

$28.990

$30.440

$28.700

-

Digiode

USA . 4,668 parts In-Stock

1+ parts

$119.548

100+ parts

-

1k+ parts

-

10k+ parts

-

4,668

$119.548

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-

-

Vyrian

USA . 2,483 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,483

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,783 parts In-Stock

1+ parts

$4.496

100+ parts

-

1k+ parts

$4.937

10k+ parts

-

1,783

$4.496

-

$4.937

-

DigiPath Technology Company

USA . 1,967 parts In-Stock

1+ parts

$4.951

100+ parts

$4.555

1k+ parts

-

10k+ parts

-

1,967

$4.951

$4.555

-

-

IDEA Electronic Components Group

UK . 2,313 parts In-Stock

1+ parts

$5.052

100+ parts

-

1k+ parts

$4.547

10k+ parts

-

2,313

$5.052

-

$4.547

-

ChromeModa Solutions

Germany . 1,066 parts In-Stock

1+ parts

$5.052

100+ parts

$4.143

1k+ parts

-

10k+ parts

-

1,066

$5.052

$4.143

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-

Corphita

USA . 328 parts In-Stock

1+ parts

$113.256

100+ parts

-

1k+ parts

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10k+ parts

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328

$113.256

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-

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Assy Fe

Spain . 52 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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52

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Overview

Discover the incredible reliability and performance of the TBP18S030MJ by Texas Instruments, a top-tier manufacturer known for producing high-quality products. This OTP ROM device offers unparalleled value with its military-grade temperature range, CMOS technology, and 256-bit memory density. Ideal for applications requiring fast access times and secure data storage, this rectangular package is perfect for military and industrial use. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed body material ensures durability and reliability of the product, making it suitable for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible timing and control, making it versatile for various applications.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures stable and consistent power supply for the device to function optimally.

Technology: CMOS

The use of CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory IC Type: OTP ROM

The OTP ROM memory type eliminates the need for external programming, offering a cost-effective and secure solution for storing data.

Technical Specifications

OTP ROM TBP18S030MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.56 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP18S030MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-163-9437, 5962011639437, 5962-01-288-6901, 5962012886901

NIIN

011639437, 012886901

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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