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TBP18S22N1

Texas Instruments

TBP18S22N1 by Texas Instruments

TBP18S22N1 by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,132 parts In-Stock

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3,132

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Digiode

USA . 2,849 parts In-Stock

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2,849

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Distributors (Availability)

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Parana Technologies

USA . 550 parts In-Stock

1+ parts

$4.216

100+ parts

-

1k+ parts

$4.651

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550

$4.216

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$4.651

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DigiPath Technology Company

USA . 1,538 parts In-Stock

1+ parts

$4.642

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1,538

$4.642

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ChromeModa Solutions

Germany . 3,222 parts In-Stock

1+ parts

$4.737

100+ parts

$3.884

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3,222

$4.737

$3.884

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IDEA Electronic Components Group

UK . 1,130 parts In-Stock

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$4.737

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$4.263

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1,130

$4.737

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$4.263

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AZTECH Wire

Italy . 698 parts In-Stock

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$16.014

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698

$16.014

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One Stop Electronics

USA . 723 parts In-Stock

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$20.000

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723

$20.000

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Corphita

USA . 341 parts In-Stock

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Overview

Experience superior quality and reliability with the TBP18S22N1 by Texas Instruments, a leading manufacturer in the industry. This OTP ROM device offers unmatched value and benefits for your applications, providing fast access times and a wide operating temperature range. From consumer electronics to industrial control systems, this product delivers high performance and efficiency. Trust Texas Instruments for cutting-edge technology and innovative solutions that meet your needs. Choose the TBP18S22N1 for uncompromising quality and exceptional performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection, ensuring the longevity and reliability of the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this OTP ROM compatible with standard power supplies, simplifying the integration process.

No. of Terminals: 20

With 20 terminals, this OTP ROM offers versatile connectivity options for various applications.

Maximum Operating Temperature: 70 °C

The OTP ROM can operate at temperatures up to 70°C, providing reliable performance in a wide range of environments.

Organization: 256X8

With an organization of 256 words by 8 bits, this OTP ROM offers efficient memory storage and retrieval capabilities.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer within the OTP ROM, making it suitable for high-performance applications.

No. of Words: 256 words

Having 256 words of memory allows the OTP ROM to store a large amount of data, making it ideal for applications requiring extensive storage capacity.

Memory IC Type: OTP ROM

Being an OTP ROM, this memory IC type offers non-volatile and secure data storage capabilities, making it a reliable choice for storing critical information.

Maximum Access Time: 70 ns

With a maximum access time of 70 nanoseconds, this OTP ROM can quickly retrieve data, ensuring efficient operation in time-sensitive applications.

Technical Specifications

OTP ROM TBP18S22N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S22N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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