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M27C512-12C6

STMicroelectronics

M27C512-12C6 by STMicroelectronics

M27C512-12C6 by STMicroelectronics is a 64KX8 OTP ROM with 120 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range (-40 to 85 °C). Commonly used for memory storage applications due to its high density and parallel interface.

Median Price

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Lifecycle Status

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12

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Vyrian

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Anansix

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Digiode

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Nova Conductors

Japan . 300 parts In-Stock

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A2Z Electronics, Inc.

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Bristol Electronics

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LWI Electronics Inc

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Global Solutions Electronics Company

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ACDS - Activité Composants Distribution Service

France . 32 parts In-Stock

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Component Electronics Inc.

Canada . 12 parts In-Stock

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Atlantic Semiconductor

USA . 2 parts In-Stock

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Ampacity Inc.

Singapore . 1,590 parts In-Stock

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$2.000

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Corohmni

South Africa . 49 parts In-Stock

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$3.001

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Aztec Data Supply Inc.

USA . 4,980 parts In-Stock

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$3.009

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IDEA Electronic Components Group

UK . 853 parts In-Stock

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MKK Technologies

India . 680 parts In-Stock

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DigiPath Technology Company

USA . 680 parts In-Stock

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Microchip USA

USA . 313 parts In-Stock

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AZTECH Wire

Italy . 370 parts In-Stock

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Lixinc

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Alle Elektronik GmbH

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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Parana Technologies

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Perfect Parts

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Computer Components Inc. - USA

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Discover the M27C512-12C6 by STMicroelectronics, a top-of-the-line OTP ROM chip that offers unparalleled quality and reliability. Perfect for industrial applications, this chip boasts a wide operating temperature range and low power consumption, making it a cost-effective solution for your memory needs. With its 64Kx8 organization and 3-state output characteristics, this chip provides fast access times and seamless integration into your systems. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations. Unlock the potential of your projects with the M27C512-12C6 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the OTP ROM, ensuring reliable performance over time.

Surface Mount: YES

Surface mount capability makes it easier to integrate the OTP ROM into circuit boards, saving space and simplifying the overall design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, enhancing the versatility and speed of the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures consistent and reliable operation of the OTP ROM, reducing the risk of malfunctions or data loss.

No. of Terminals: 32

Having 32 terminals enables efficient connectivity with other components, facilitating seamless integration and communication within the circuit.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures the OTP ROM can withstand elevated temperatures without performance degradation, suitable for industrial environments.

Memory Width: 8

8-bit memory width allows for storing and accessing data in chunks of 8 bits, enhancing data processing efficiency and speed.

Maximum Access Time: 120 ns

Fast access time of 120 ns ensures quick retrieval of data from the OTP ROM, contributing to overall system performance and responsiveness.

Technical Specifications

OTP ROM M27C512-12C6 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.43 mm

Trade Compliance

M27C512-12C6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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