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M27C512-90C6

STMicroelectronics

M27C512-90C6 by STMicroelectronics

M27C512-90C6 by STMicroelectronics is a 64KX8 OTP ROM with 90 ns access time and operates at 5V. It features a 3-STATE output, industrial temperature grade, and parallel interface. Commonly used in applications requiring non-volatile memory storage with fast read speeds.

Median Price

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Lifecycle Status

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11

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Vyrian

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Digiode

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Anansix

USA . 1,711 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Bristol Electronics

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Sea View Technologies

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Atlantic Semiconductor

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LIBRA Elektronik GmbH

Germany . 18 parts In-Stock

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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IDEA Electronic Components Group

UK . 194 parts In-Stock

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$3.407

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$3.066

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Aztec Data Supply Inc.

USA . 4,370 parts In-Stock

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$5.540

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Corohmni

South Africa . 184 parts In-Stock

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$5.724

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MKK Technologies

India . 1,111 parts In-Stock

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$6.406

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DigiPath Technology Company

USA . 1,111 parts In-Stock

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Microchip USA

USA . 118 parts In-Stock

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$7.550

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Semicontronic

India . 1,307 parts In-Stock

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$8.775

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$8.730

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AZTECH Wire

Italy . 511 parts In-Stock

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$12.998

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Ampacity Inc.

Singapore . 563 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Continental Prestige Electronics

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Argo Parts USA

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Kepictronics

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Parana Technologies

USA . 1,776 parts In-Stock

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Corphita

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Bastille Electronics

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Overview

Unlock the power of reliable data storage with the M27C512-90C6 by STMicroelectronics. As a trusted manufacturer, STMicroelectronics delivers top-quality OTP ROM chips that are perfect for a wide range of applications. With a 64KX8 organization and 3-STATE output characteristics, this chip offers fast access times and low standby current for optimal performance. Whether you're working on industrial automation or embedded systems, this chip's 524288 bit memory density and 90 ns maximum access time provide the speed and capacity you need. Trust in STMicroelectronics for high-performance memory solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Easy to install on PCBs, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Allows for flexible operation and communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement for compatibility with most systems.

No. of Terminals: 32

Provides ample connectivity options for integration with other devices.

Maximum Operating Temperature: 85 °C

Suitable for use in a wide range of environmental conditions.

Organization: 64KX8

Offers a high level of memory organization for storing data efficiently.

Memory Density: 524288 bit

Provides a large storage capacity for storing a significant amount of data.

Maximum Access Time: 90 ns

Ensures fast read/write speeds for efficient data retrieval.

Technical Specifications

OTP ROM M27C512-90C6 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.43 mm

Trade Compliance

M27C512-90C6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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