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5962-01-214-2169

Texas Instruments

5962-01-214-2169 by Texas Instruments

Texas Instruments' 5962-01-214-2169 is a MILITARY-grade OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,477 parts In-Stock

1+ parts

-

100+ parts

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5,477

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Digiode

USA . 2,290 parts In-Stock

1+ parts

-

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2,290

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 913 parts In-Stock

1+ parts

$1.477

100+ parts

-

1k+ parts

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913

$1.477

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Northwest PG Solutions

USA . 1,380 parts In-Stock

1+ parts

$1.625

100+ parts

-

1k+ parts

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1,380

$1.625

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Parana Technologies

USA . 1,423 parts In-Stock

1+ parts

$4.217

100+ parts

-

1k+ parts

$4.651

10k+ parts

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1,423

$4.217

-

$4.651

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DigiPath Technology Company

USA . 132 parts In-Stock

1+ parts

$4.643

100+ parts

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132

$4.643

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IDEA Electronic Components Group

UK . 1,916 parts In-Stock

1+ parts

$4.738

100+ parts

-

1k+ parts

$4.264

10k+ parts

-

1,916

$4.738

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$4.264

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ChromeModa Solutions

Germany . 292 parts In-Stock

1+ parts

$4.738

100+ parts

$3.885

1k+ parts

-

10k+ parts

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292

$4.738

$3.885

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AZTECH Wire

Italy . 348 parts In-Stock

1+ parts

$6.816

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348

$6.816

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One Stop Electronics

USA . 416 parts In-Stock

1+ parts

$23.000

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416

$23.000

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Corphita

USA . 2,750 parts In-Stock

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2,750

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Overview

Unlock the power of innovation with the 5962-01-214-2169 by Texas Instruments. As a trusted leader in semiconductor manufacturing, Texas Instruments delivers unmatched quality and reliability. This OTP ROM device offers exceptional value and benefits, making it ideal for military-grade applications where performance and durability are crucial. With a memory density of 4096 bits and fast access time of 85 ns, this product ensures seamless operation even in extreme conditions. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against moisture, humidity, and temperature fluctuations, making this OTP ROM highly durable and reliable.

Screening Level: MIL-STD-883 Class B (Modified)

The modified MIL-STD-883 Class B screening ensures that the OTP ROM meets stringent quality and reliability standards, making it suitable for military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with standard power supplies and ensures efficient power consumption.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact and space-efficient design, making it easy to integrate this OTP ROM into various electronic systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM can reliably perform in harsh environmental conditions without compromising its functionality.

Technology: TTL

Using TTL technology provides fast and reliable data transfers, making this OTP ROM suitable for applications requiring high-speed performance.

Memory IC Type: OTP ROM

Being a OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data stored in this memory is secure and cannot be altered, making it ideal for storing critical information.

Technical Specifications

OTP ROM 5962-01-214-2169 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-214-2169 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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