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JBP18SA42MJ

Texas Instruments

JBP18SA42MJ by Texas Instruments

JBP18SA42MJ by Texas Instruments is a MILITARY-grade OTP ROM with 512x8 organization and 4096-bit memory density. It operates b/w -55°C to 125°C, has a max access time of 85ns, and is ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,132 parts In-Stock

1+ parts

-

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6,132

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Digiode

USA . 363 parts In-Stock

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363

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 666 parts In-Stock

1+ parts

$2.000

100+ parts

-

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666

$2.000

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Parana Technologies

USA . 899 parts In-Stock

1+ parts

$2.177

100+ parts

-

1k+ parts

$2.688

10k+ parts

-

899

$2.177

-

$2.688

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DigiPath Technology Company

USA . 1,722 parts In-Stock

1+ parts

$2.397

100+ parts

$2.205

1k+ parts

-

10k+ parts

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1,722

$2.397

$2.205

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IDEA Electronic Components Group

UK . 1,282 parts In-Stock

1+ parts

$2.446

100+ parts

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1k+ parts

$2.201

10k+ parts

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1,282

$2.446

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$2.201

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ChromeModa Solutions

Germany . 291 parts In-Stock

1+ parts

$2.446

100+ parts

$2.006

1k+ parts

-

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291

$2.446

$2.006

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AZTECH Wire

Italy . 218 parts In-Stock

1+ parts

$12.730

100+ parts

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218

$12.730

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Corphita

USA . 4,886 parts In-Stock

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4,886

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Overview

Unlock a world of possibilities with the JBP18SA42MJ by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and reliability. Perfect for military-grade applications, this memory IC boasts a wide operating temperature range and lightning-fast access time. With 512 words of memory at your fingertips, the JBP18SA42MJ delivers exceptional value and performance for all your data storage needs. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides better heat dissipation and mechanical durability, making the product reliable in harsh environments.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into various electronic systems.

No. of Terminals: 20

Having 20 terminals allows for sufficient connectivity options and versatility in applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand elevated temperatures without performance degradation.

Technology: TTL

TTL technology ensures fast and reliable data transfer, making the product suitable for high-performance applications.

Memory Density: 4096 bit

With a high memory density, the product can store a large amount of data efficiently.

Maximum Access Time: 85 ns

The low maximum access time ensures quick retrieval of information, enhancing overall system performance.

Technical Specifications

OTP ROM JBP18SA42MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

JBP18SA42MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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