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5962-01-218-8490

Texas Instruments

5962-01-218-8490 by Texas Instruments

Texas Instruments' 5962-01-218-8490 is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 75ns and operates in commercial temperature grades. This rectangular ceramic package with 20 terminals is ideal for applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,680 parts In-Stock

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9,680

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Digiode

USA . 4,186 parts In-Stock

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4,186

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Distributors (Availability)

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Parana Technologies

USA . 1,466 parts In-Stock

1+ parts

$5.285

100+ parts

-

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$5.913

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1,466

$5.285

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$5.913

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DigiPath Technology Company

USA . 3 parts In-Stock

1+ parts

$5.819

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$5.354

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3

$5.819

$5.354

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IDEA Electronic Components Group

UK . 805 parts In-Stock

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$5.938

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$5.344

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805

$5.938

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$5.344

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ChromeModa Solutions

Germany . 119 parts In-Stock

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$5.938

100+ parts

$4.869

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119

$5.938

$4.869

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AZTECH Wire

Italy . 536 parts In-Stock

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$15.490

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536

$15.490

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One Stop Electronics

USA . 1,379 parts In-Stock

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$22.000

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1,379

$22.000

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Corphita

USA . 2,934 parts In-Stock

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Northwest PG Solutions

USA . 1,841 parts In-Stock

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Native Components

USA . 93 parts In-Stock

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Overview

Unleash the power of innovation with the 5962-01-218-8490 by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and reliability. Perfect for a wide range of applications, this product ensures seamless performance and efficiency. Experience the value and benefits of cutting-edge technology with Texas Instruments' renowned expertise. Trust in Texas Instruments to deliver top-notch solutions that exceed your expectations. Elevate your projects with the 5962-01-218-8490 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against environmental factors such as moisture and temperature fluctuations, ensuring the durability and reliability of the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this OTP ROM compatible with a wide range of systems and devices, simplifying integration and deployment.

Organization: 512X8

With a 512 words x 8 memory organization, this OTP ROM offers a balanced combination of storage capacity and data retrieval speed for efficient performance.

Technology: TTL

Utilizing TTL technology ensures compatibility with a variety of existing systems and components, making this OTP ROM a versatile and widely applicable solution.

Memory IC Type: OTP ROM

As a One-Time Programmable Read-Only Memory, this product offers secure data storage and retrieval capabilities, ideal for applications where data privacy and integrity are critical.

Maximum Access Time: 75 ns

With a fast maximum access time of 75 nanoseconds, this OTP ROM enables quick and seamless data retrieval, contributing to overall system efficiency and performance.

Technical Specifications

OTP ROM 5962-01-218-8490 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-218-8490 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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