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5962-01-183-9559

Texas Instruments

5962-01-183-9559 by Texas Instruments

Texas Instruments' 5962-01-183-9559 is a 32X8 OTP ROM with 5V supply, 16 terminals, and 40ns access time. Ideal for commercial applications requiring fast memory access in a rectangular plastic/epoxy package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,922 parts In-Stock

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7,922

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Digiode

USA . 106 parts In-Stock

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106

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Mil-Aero Solutions, Inc.

USA . 4 parts In-Stock

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4

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Distributors (Availability)

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Native Components

USA . 528 parts In-Stock

1+ parts

$0.817

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528

$0.817

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Northwest PG Solutions

USA . 2,194 parts In-Stock

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$0.899

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2,194

$0.899

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Parana Technologies

USA . 1,465 parts In-Stock

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$3.834

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$4.321

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1,465

$3.834

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$4.321

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DigiPath Technology Company

USA . 372 parts In-Stock

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$4.222

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$3.884

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372

$4.222

$3.884

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ChromeModa Solutions

Germany . 2,717 parts In-Stock

1+ parts

$4.308

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$3.533

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2,717

$4.308

$3.533

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IDEA Electronic Components Group

UK . 1,292 parts In-Stock

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$4.308

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$3.877

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1,292

$4.308

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$3.877

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AZTECH Wire

Italy . 448 parts In-Stock

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$19.414

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448

$19.414

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One Stop Electronics

USA . 783 parts In-Stock

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$28.000

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Corphita

USA . 3,254 parts In-Stock

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Overview

Elevate your projects with the 5962-01-183-9559 by Texas Instruments, a top-tier OTP ROM that guarantees quality and reliability. Designed for commercial-grade applications, this product boasts a nominal supply voltage of 5V and a lightning-fast maximum access time of 40ns. With its 32x8 organization and 16 terminals in a sleek rectangular package, this IC offers unparalleled performance and value. Trust Texas Instruments to deliver innovative solutions that exceed expectations and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection for the OTP ROM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with most standard electronic systems, allowing for easy integration.

No. of Terminals: 16

With 16 terminals, this OTP ROM has sufficient connectivity options for versatile applications and connectivity needs.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows the OTP ROM to perform reliably even in challenging environmental conditions.

Organization: 32X8

The 32x8 organization offers a good balance between storage capacity and access speed, making it suitable for a wide range of applications.

Technology: TTL

Being TTL technology ensures fast operation and compatibility with a wide range of systems, enhancing the efficiency and reliability of the OTP ROM.

Memory IC Type: OTP ROM

The OTP ROM type of memory IC provides secure and non-volatile storage, making it ideal for storing critical data or code that should not be altered.

Maximum Access Time: 40 ns

The fast maximum access time of 40 ns ensures quick retrieval of data from the OTP ROM, leading to improved system performance.

Technical Specifications

OTP ROM 5962-01-183-9559 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-183-9559 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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