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TBP28L22JP4

Texas Instruments

TBP28L22JP4 by Texas Instruments

TBP28L22JP4 by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and operates in commercial temperature grades. This rectangular ceramic package with 20 terminals is ideal for applications requiring reliable non-volatile memory storage in TTL technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,033 parts In-Stock

1+ parts

-

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5,033

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Digiode

USA . 2,992 parts In-Stock

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2,992

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 667 parts In-Stock

1+ parts

$3.611

100+ parts

-

1k+ parts

$4.125

10k+ parts

-

667

$3.611

-

$4.125

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DigiPath Technology Company

USA . 340 parts In-Stock

1+ parts

$3.976

100+ parts

$3.658

1k+ parts

-

10k+ parts

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340

$3.976

$3.658

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ChromeModa Solutions

Germany . 3,511 parts In-Stock

1+ parts

$4.057

100+ parts

$3.327

1k+ parts

-

10k+ parts

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3,511

$4.057

$3.327

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IDEA Electronic Components Group

UK . 654 parts In-Stock

1+ parts

$4.057

100+ parts

-

1k+ parts

$3.651

10k+ parts

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654

$4.057

-

$3.651

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AZTECH Wire

Italy . 299 parts In-Stock

1+ parts

$8.475

100+ parts

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299

$8.475

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One Stop Electronics

USA . 1,355 parts In-Stock

1+ parts

$13.000

100+ parts

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1,355

$13.000

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Corphita

USA . 3,624 parts In-Stock

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3,624

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Overview

Unlock the power of reliable data storage with the TBP28L22JP4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers quality products that meet the highest standards. This OTP ROM device is versatile and ideal for a wide range of applications. With its durable ceramic package and efficient design, customers can trust in its performance. Experience the value and benefits of this product, from its ease of use to its fast access time. Trust Texas Instruments to provide you with the tools you need for success.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic offers excellent thermal resistance, making this product suitable for high temperature environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with most systems and power sources.

No. of Terminals: 20

Having 20 terminals provides ample connectivity options for integration into different circuit designs.

Package Style (Meter): IN-LINE

The in-line package style makes it easy to incorporate this OTP ROM into existing circuit layouts without requiring extensive redesign.

Memory Density: 2048 bit

With a high memory density of 2048 bits, this OTP ROM can store a large amount of data efficiently.

Maximum Access Time: 70 ns

A fast access time of 70 ns ensures quick retrieval of data, enhancing overall system performance.

Technical Specifications

OTP ROM TBP28L22JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L22JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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