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CMS68P512N-200

Texas Instruments

CMS68P512N-200 by Texas Instruments

Texas Instruments' CMS68P512N-200 is a 512Kx8 OTP ROM with 3-STATE output. Operating at 5V, it has a max access time of 200ns and supports parallel mode. Ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,523 parts In-Stock

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3,523

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Digiode

USA . 2,364 parts In-Stock

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2,364

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Distributors (Availability)

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Native Components

USA . 112 parts In-Stock

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$1.000

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-

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112

$1.000

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Northwest PG Solutions

USA . 286 parts In-Stock

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$1.100

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286

$1.100

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Parana Technologies

USA . 187 parts In-Stock

1+ parts

$1.834

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$2.384

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187

$1.834

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$2.384

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DigiPath Technology Company

USA . 1,026 parts In-Stock

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$2.020

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$1.858

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1,026

$2.020

$1.858

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ChromeModa Solutions

Germany . 3,985 parts In-Stock

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$2.061

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$1.690

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3,985

$2.061

$1.690

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IDEA Electronic Components Group

UK . 550 parts In-Stock

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$2.061

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$1.855

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550

$2.061

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$1.855

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AZTECH Wire

Italy . 626 parts In-Stock

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$5.048

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One Stop Electronics

USA . 1,539 parts In-Stock

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$20.000

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Corphita

USA . 4,573 parts In-Stock

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Overview

Unlock the power of seamless data storage and retrieval with the CMS68P512N-200 by Texas Instruments. Crafted with precision and innovation, this OTP ROM offers unparalleled reliability and performance for a wide range of applications. Whether you're in need of secure data storage, efficient code execution, or reliable firmware updates, this versatile microelectronic assembly delivers. Trust in Texas Instruments' legacy of excellence and elevate your projects with the CMS68P512N-200 - where quality meets value seamlessly.

Feature Benefit Bullets

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and control, making it easier to integrate with different systems.

Input/Output Type: COMMON

Common input/output type simplifies connectivity and compatibility with other devices.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with many existing systems and reduces the need for additional power conversion.

No. of Terminals: 68

Having 68 terminals provides ample connections for input/output, power, and control signals, allowing for versatile usage.

Organization: 512KX8

Organized as 512Kx8, this OTP ROM offers a good balance between memory capacity and data width, suitable for many applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of systems, making this OTP ROM energy-efficient and reliable.

Maximum Access Time: 200 ns

With a maximum access time of 200 ns, this OTP ROM provides fast data retrieval, contributing to efficient system performance.

Technical Specifications

OTP ROM CMS68P512N-200 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Alternate Memory Width:

16

Input/Output Type:

COMMON

JESD-30 Code:

X-XXMA-X68

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

68

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

55 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

CARD68

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Trade Compliance

CMS68P512N-200 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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