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CMS68P1MB-200

Texas Instruments

CMS68P1MB-200 by Texas Instruments

Texas Instruments' CMS68P1MB-200 is a 1MX8 OTP ROM with 1048576 words and 8388608 bit memory density. Operating at 0-55 °C, it has a max access time of 200 ns and consumes up to 100 mA. Ideal for applications requiring reliable non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,468 parts In-Stock

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3,468

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Vyrian

USA . 3,245 parts In-Stock

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3,245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 481 parts In-Stock

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$1.000

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-

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481

$1.000

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Parana Technologies

USA . 1,692 parts In-Stock

1+ parts

$2.347

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$2.848

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1,692

$2.347

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$2.848

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DigiPath Technology Company

USA . 1,962 parts In-Stock

1+ parts

$2.584

100+ parts

$2.378

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1,962

$2.584

$2.378

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ChromeModa Solutions

Germany . 2,112 parts In-Stock

1+ parts

$2.637

100+ parts

$2.162

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2,112

$2.637

$2.162

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IDEA Electronic Components Group

UK . 135 parts In-Stock

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$2.637

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$2.373

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135

$2.637

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$2.373

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AZTECH Wire

Italy . 831 parts In-Stock

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$7.230

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831

$7.230

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Native Components

USA . 675 parts In-Stock

1+ parts

$399.443

100+ parts

$391.454

1k+ parts

$387.459

10k+ parts

$383.465

675

$399.443

$391.454

$387.459

$383.465

Northwest PG Solutions

USA . 2,131 parts In-Stock

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$439.387

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2,131

$439.387

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Corphita

USA . 2,273 parts In-Stock

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2,273

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Overview

Unleash the power of cutting-edge technology with the Texas Instruments CMS68P1MB-200 OTP ROM. Manufactured by a trusted leader in the industry, this versatile device offers unparalleled quality and reliability. Ideal for a wide range of applications, this innovative product provides customers with exceptional value, benefits, and advantages. Say goodbye to limitations and hello to endless possibilities with the CMS68P1MB-200.

Feature Benefit Bullets

Operating Mode: ASYNCHRONOUS

Allows for independent operating of the memory without being synchronized to an external clock, providing flexibility and ease of use.

Input/Output Type: COMMON

Simple and efficient design with common input/output type for easy integration with other components.

Nominal Supply Voltage: 5V

Compatible with standard 5V power supplies, ensuring easy integration into existing systems.

Organization: 1MX8

Offers a high density of memory organization, providing ample storage capacity.

Maximum Operating Temperature: 55 °C

Can operate effectively in a wide range of temperatures, making it suitable for various environments.

Technology: CMOS

Uses CMOS technology which is known for low power consumption and reliability, enhancing the efficiency of the memory.

Maximum Access Time: 200 ns

Provides fast access times, ensuring quick data retrieval and seamless performance.

Technical Specifications

OTP ROM CMS68P1MB-200 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Alternate Memory Width:

16

Input/Output Type:

COMMON

JESD-30 Code:

X-XXMA-X68

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

55 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

CARD68

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Trade Compliance

CMS68P1MB-200 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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