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5962-01-266-0869

Texas Instruments

5962-01-266-0869 by Texas Instruments

Texas Instruments' 5962-01-266-0869 is a MILITARY-grade OTP ROM with 2KX4 organization, 2048 words, and 8192 bit memory density. Featuring a max operating temperature of 125°C, it has an access time of 85 ns. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,139 parts In-Stock

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Digiode

USA . 144 parts In-Stock

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144

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Distributors (Availability)

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Parana Technologies

USA . 744 parts In-Stock

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$2.329

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$2.828

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744

$2.329

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$2.828

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DigiPath Technology Company

USA . 789 parts In-Stock

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$2.565

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$2.359

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$2.359

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IDEA Electronic Components Group

UK . 1,978 parts In-Stock

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$2.617

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$2.355

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$2.617

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ChromeModa Solutions

Germany . 819 parts In-Stock

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$2.617

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$2.146

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819

$2.617

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AZTECH Wire

Italy . 865 parts In-Stock

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$6.835

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$6.835

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One Stop Electronics

USA . 678 parts In-Stock

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$21.000

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Corphita

USA . 1,378 parts In-Stock

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Northwest PG Solutions

USA . 1,031 parts In-Stock

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$3.775

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Native Components

USA . 924 parts In-Stock

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$3.736

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Overview

Discover the exceptional quality and reliability of Texas Instruments with the 5962-01-266-0869 OTP ROM. This innovative product offers unparalleled performance in military-grade applications, ensuring optimal functionality even in the harshest environments. With a memory density of 8192 bits and a maximum access time of just 85ns, this OTP ROM provides fast and efficient data storage capabilities. Trust Texas Instruments to deliver cutting-edge technology that meets your needs for high-performance memory solutions. Unlock the potential of your projects with the 5962-01-266-0869.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and stability, making it suitable for high temperature applications.

Screening Level: 38535Q/M;38534H;883B

Meets stringent military screening standards, ensuring reliability and performance in demanding environments.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and integration into electronic circuits.

No. of Terminals: 18

Sufficient number of terminals for connectivity and data transfer in the circuit.

Package Style (Meter): IN-LINE

In-line package style facilitates easy installation and connection in the circuit.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in various operating conditions.

Organization: 2KX4

Efficient organization of memory cells for optimal data storage and access.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Position: DUAL

Dual terminal position provides redundancy and ensures secure connectivity.

Temperature Grade: MILITARY

Military-grade temperature tolerance and performance for rugged applications.

Technology: TTL

Compatible with TTL technology for reliable and fast data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for easy installation and secure connections.

Maximum Supply Current: 175 mA

Low maximum supply current for efficient power consumption.

No. of Words: 2048 words

Sufficient memory capacity for storing data and instructions.

Memory Width: 4

Memory width of 4 bits allows for efficient data storage and retrieval.

Terminal Pitch: 2.54 mm

Optimal terminal pitch for easy PCB layout and connection.

No. of Words Code: 2K

2K words code for easy reference and data organization.

Memory Density: 8192 bit

High memory density for storing large amounts of data in a compact space.

Memory IC Type: OTP ROM

OTP ROM offers non-volatile memory storage with one-time programmability.

Maximum Access Time: 85 ns

Fast access time for quick retrieval of data.

Technical Specifications

OTP ROM 5962-01-266-0869 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-266-0869 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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