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JBP38S03X-20MFK

Texas Instruments

JBP38S03X-20MFK by Texas Instruments

JBP38S03X-20MFK by Texas Instruments is a 32x8 OTP ROM chip carrier with 20 terminals. It operates at -55 to 125 °C, with a max access time of 20 ns. Ideal for military-grade applications requiring fast memory access in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,719 parts In-Stock

1+ parts

-

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4,719

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Digiode

USA . 3,627 parts In-Stock

1+ parts

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3,627

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,156 parts In-Stock

1+ parts

$2.744

100+ parts

-

1k+ parts

$3.228

10k+ parts

-

1,156

$2.744

-

$3.228

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DigiPath Technology Company

USA . 1,991 parts In-Stock

1+ parts

$3.021

100+ parts

$2.780

1k+ parts

-

10k+ parts

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1,991

$3.021

$2.780

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ChromeModa Solutions

Germany . 4,481 parts In-Stock

1+ parts

$3.083

100+ parts

$2.528

1k+ parts

-

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4,481

$3.083

$2.528

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IDEA Electronic Components Group

UK . 1,188 parts In-Stock

1+ parts

$3.083

100+ parts

-

1k+ parts

$2.775

10k+ parts

-

1,188

$3.083

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$2.775

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AZTECH Wire

Italy . 790 parts In-Stock

1+ parts

$5.624

100+ parts

-

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790

$5.624

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One Stop Electronics

USA . 137 parts In-Stock

1+ parts

$12.000

100+ parts

-

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137

$12.000

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Corphita

USA . 1,358 parts In-Stock

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1,358

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Overview

Unlock the power of innovative technology with the JBP38S03X-20MFK by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and reliability for a wide range of applications. Experience the seamless integration and efficiency this product provides, giving you the competitive edge you need to succeed. Trust in Texas Instruments to deliver cutting-edge solutions that exceed expectations and drive results. Elevate your projects with the JBP38S03X-20MFK and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body provides good thermal conductivity and mechanical strength, ensuring durability and reliability in harsh operating conditions.

Surface Mount: YES

Surface mount technology allows for efficient and compact PCB design, saving space and reducing production costs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common supply voltage of 5V makes this OTP ROM compatible with a wide range of systems and applications.

No. of Terminals: 20

Having 20 terminals provides sufficient connectivity options for interfacing with other components and peripherals.

Maximum Operating Temperature: 125 °C

Ability to operate at high temperatures up to 125°C makes this OTP ROM suitable for extreme environments and industrial applications.

Organization: 32X8

With a 32 words x 8 memory width organization, this OTP ROM offers a good balance between storage capacity and access speed.

Technology: TTL

Using TTL technology ensures reliable and fast data processing, making this OTP ROM suitable for high-speed applications.

Memory IC Type: OTP ROM

Being a OTP ROM means that the data in this memory is permanently programmed during manufacturing, ensuring security and reliability of stored information.

Maximum Access Time: 20 ns

With a fast access time of 20 ns, this OTP ROM can quickly retrieve stored data, improving overall system performance.

Technical Specifications

OTP ROM JBP38S03X-20MFK attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

JESD-30 Code:

S-XQCC-N20

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

125 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP38S03X-20MFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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