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JBP34L16XMFK

Texas Instruments

JBP34L16XMFK by Texas Instruments

JBP34L16XMFK by Texas Instruments is a 4KX4 OTP ROM with 16384 bit memory density. Operating b/w -55 to 125 °C, it has a supply voltage of 5V and comes in a square chip carrier package. Ideal for military applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,311 parts In-Stock

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7,311

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Digiode

USA . 862 parts In-Stock

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862

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,021 parts In-Stock

1+ parts

$3.321

100+ parts

-

1k+ parts

$3.843

10k+ parts

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2,021

$3.321

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$3.843

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DigiPath Technology Company

USA . 2,180 parts In-Stock

1+ parts

$3.656

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-

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2,180

$3.656

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IDEA Electronic Components Group

UK . 1,289 parts In-Stock

1+ parts

$3.731

100+ parts

-

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$3.358

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1,289

$3.731

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$3.358

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ChromeModa Solutions

Germany . 307 parts In-Stock

1+ parts

$3.731

100+ parts

$3.059

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-

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307

$3.731

$3.059

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AZTECH Wire

Italy . 533 parts In-Stock

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$15.797

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533

$15.797

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One Stop Electronics

USA . 652 parts In-Stock

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$27.000

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652

$27.000

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Corphita

USA . 3,783 parts In-Stock

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Overview

Discover the JBP34L16XMFK by Texas Instruments, a high-quality OTP ROM chip that offers unparalleled reliability and performance. Manufactured by Texas Instruments, a trusted leader in semiconductor technology, this product is perfect for military-grade applications where reliability is crucial. With a memory density of 16384 bits and a wide operating temperature range from -55°C to 125°C, this OTP ROM chip provides exceptional value and benefits to customers looking for a dependable solution for their electronic devices. Experience the superior quality and advantages of Texas Instruments with the JBP34L16XMFK.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material offers high durability and thermal stability, making it suitable for military applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard nominal supply voltage of 5V, making it compatible with most systems and reducing the need for additional voltage conversion circuitry.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliable performance in harsh environmental conditions and critical applications where temperature extremes are a concern.

Technology: TTL

Utilizes TTL technology for fast and efficient processing of data, resulting in high-speed operation and low power consumption.

Memory Density: 16384 bit

Offers a high memory density of 16384 bits, allowing for storage of a large amount of data in a compact form factor.

Technical Specifications

OTP ROM JBP34L16XMFK attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

20

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4KX4

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP34L16XMFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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