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JBP34S16X-30MFK

Texas Instruments

JBP34S16X-30MFK by Texas Instruments

JBP34S16X-30MFK by Texas Instruments is a 4Kx4 OTP ROM with 16384-bit memory density. It operates at temperatures ranging from -55 to 125°C, making it suitable for military-grade applications. With a package style of chip carrier and terminal pitch of 1.27mm, this device is ideal for high-reliability systems requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,813 parts In-Stock

1+ parts

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3,813

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Digiode

USA . 269 parts In-Stock

1+ parts

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269

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,273 parts In-Stock

1+ parts

$3.447

100+ parts

-

1k+ parts

$3.973

10k+ parts

-

2,273

$3.447

-

$3.973

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DigiPath Technology Company

USA . 269 parts In-Stock

1+ parts

$3.796

100+ parts

$3.492

1k+ parts

-

10k+ parts

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269

$3.796

$3.492

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ChromeModa Solutions

Germany . 2,419 parts In-Stock

1+ parts

$3.873

100+ parts

$3.176

1k+ parts

-

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2,419

$3.873

$3.176

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IDEA Electronic Components Group

UK . 1,126 parts In-Stock

1+ parts

$3.873

100+ parts

-

1k+ parts

$3.486

10k+ parts

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1,126

$3.873

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$3.486

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AZTECH Wire

Italy . 439 parts In-Stock

1+ parts

$14.967

100+ parts

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439

$14.967

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One Stop Electronics

USA . 1,521 parts In-Stock

1+ parts

$28.000

100+ parts

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1,521

$28.000

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Corphita

USA . 2,124 parts In-Stock

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2,124

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Overview

Experience unparalleled quality and reliability with the Texas Instruments JBP34S16X-30MFK OTP ROM. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products that meet the highest standards. This versatile chip carrier package offers endless applications in military-grade technology, ensuring optimal performance even in extreme conditions. Trust in the 4Kx4 memory density to store critical data securely. Unlock the value of this OTP ROM for your next project and enjoy the benefits of Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity, making the product suitable for operation in a wide range of temperatures.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and improving assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with most systems and simplifies power design considerations.

No. of Terminals: 20

Sufficient number of terminals for connecting to other components, enabling versatile integration in various applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in demanding environments without risk of overheating.

Memory Width: 4

Wide memory width allows for storing and accessing larger amounts of data efficiently.

Technical Specifications

OTP ROM JBP34S16X-30MFK attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

20

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4KX4

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP34S16X-30MFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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