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JBP38S030-30MJ

Texas Instruments

JBP38S030-30MJ by Texas Instruments

Texas Instruments' JBP38S030-30MJ is a MILITARY-grade OTP ROM with 32x8 organization, 30ns access time, and 125mA max supply current. Ideal for applications requiring reliable memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,164 parts In-Stock

1+ parts

-

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7,164

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Digiode

USA . 2,776 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,776

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,617 parts In-Stock

1+ parts

$3.613

100+ parts

-

1k+ parts

$4.127

10k+ parts

-

1,617

$3.613

-

$4.127

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DigiPath Technology Company

USA . 2,177 parts In-Stock

1+ parts

$3.978

100+ parts

$3.660

1k+ parts

-

10k+ parts

-

2,177

$3.978

$3.660

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ChromeModa Solutions

Germany . 2,085 parts In-Stock

1+ parts

$4.059

100+ parts

$3.328

1k+ parts

-

10k+ parts

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2,085

$4.059

$3.328

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IDEA Electronic Components Group

UK . 1,179 parts In-Stock

1+ parts

$4.059

100+ parts

-

1k+ parts

$3.653

10k+ parts

-

1,179

$4.059

-

$3.653

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AZTECH Wire

Italy . 243 parts In-Stock

1+ parts

$12.670

100+ parts

-

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243

$12.670

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One Stop Electronics

USA . 1,026 parts In-Stock

1+ parts

$14.000

100+ parts

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1,026

$14.000

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Corphita

USA . 2,510 parts In-Stock

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2,510

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Overview

Unleash the power of cutting-edge technology with the JBP38S030-30MJ from Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled reliability and performance for a wide range of applications. Whether you're a seasoned professional or a DIY enthusiast, this product guarantees seamless integration, superior quality, and unbeatable value. Elevate your projects to new heights with Texas Instruments' trusted solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity and stability, making the product durable and reliable in a wide range of operating temperatures.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with common power systems, making integration into existing circuits easier.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product is suitable for use in harsh environments where high temperatures may be encountered.

Organization: 32X8

The organization of 32 words by 8 bits provides a decent amount of memory storage capacity for various applications.

Technology: TTL

Using TTL technology ensures fast response times and reliable performance, making it ideal for applications that require quick data access.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory ensures data security and permanence, making it suitable for storing critical information that should not be altered.

Maximum Access Time: 30 ns

With a maximum access time of 30 nanoseconds, this product offers quick data retrieval, making it suitable for high-speed applications.

Technical Specifications

OTP ROM JBP38S030-30MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

30 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

125 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP38S030-30MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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