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CBP18SA22MJ

Texas Instruments

CBP18SA22MJ by Texas Instruments

CBP18SA22MJ by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 256x8 organization, 2048-bit memory density, and 80ns max access time. Ideal for military applications requiring reliable data storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,464 parts In-Stock

1+ parts

-

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9,464

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Digiode

USA . 1,812 parts In-Stock

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1,812

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 770 parts In-Stock

1+ parts

$0.409

100+ parts

-

1k+ parts

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10k+ parts

$0.393

770

$0.409

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-

$0.393

Northwest PG Solutions

USA . 1,659 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

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$0.397

1,659

$0.450

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-

$0.397

Parana Technologies

USA . 481 parts In-Stock

1+ parts

$3.947

100+ parts

-

1k+ parts

$4.419

10k+ parts

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481

$3.947

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$4.419

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DigiPath Technology Company

USA . 1,202 parts In-Stock

1+ parts

$4.346

100+ parts

$3.999

1k+ parts

-

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1,202

$4.346

$3.999

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ChromeModa Solutions

Germany . 743 parts In-Stock

1+ parts

$4.435

100+ parts

$3.637

1k+ parts

-

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743

$4.435

$3.637

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IDEA Electronic Components Group

UK . 251 parts In-Stock

1+ parts

$4.435

100+ parts

-

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$3.992

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251

$4.435

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$3.992

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One Stop Electronics

USA . 1,249 parts In-Stock

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$18.000

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1,249

$18.000

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AZTECH Wire

Italy . 207 parts In-Stock

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$18.973

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207

$18.973

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Corphita

USA . 3,249 parts In-Stock

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3,249

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Overview

Enhance your electronic designs with the high-quality CBP18SA22MJ OTP ROM by Texas Instruments. As a renowned manufacturer in the industry, Texas Instruments delivers reliable products that meet stringent MIL-STD-883 Class B standards. This OTP ROM is ideal for military-grade applications, offering a wide temperature range and fast access times. Trust Texas Instruments to provide cutting-edge technology and unmatched performance. Elevate your projects with the value and benefits of the CBP18SA22MJ, setting new standards in efficiency and reliability.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides high durability and reliability, making the product suitable for harsh environmental conditions.

Screening Level: MIL-STD-883 Class B (Modified)

MIL-STD-883 Class B screening ensures high quality and reliability of the product, meeting stringent military standards.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with most systems.

Organization: 256X8

The organization of 256 words by 8 memory width provides a decent storage capacity for data.

Technology: TTL

TTL technology offers fast data transmission speeds and low power consumption, making it efficient for various applications.

Temperature Grade: MILITARY

Designed to meet military-grade standards, ensuring reliability in extreme temperature conditions and harsh environments.

Memory IC Type: OTP ROM

OTP ROM technology allows for one-time programmability, ensuring data security and protection against tampering.

Technical Specifications

OTP ROM CBP18SA22MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CBP18SA22MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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