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SNJ54S473J

Texas Instruments

SNJ54S473J by Texas Instruments

SNJ54S473J by Texas Instruments is a MILITARY-grade OTP ROM with 512x8 organization and 4096-bit memory density. Featuring a max operating temperature of 125°C, it has an access time of 85 ns. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,518 parts In-Stock

1+ parts

-

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5,518

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Digiode

USA . 3,721 parts In-Stock

1+ parts

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3,721

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 445 parts In-Stock

1+ parts

$3.000

100+ parts

-

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445

$3.000

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Parana Technologies

USA . 235 parts In-Stock

1+ parts

$4.894

100+ parts

-

1k+ parts

$5.425

10k+ parts

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235

$4.894

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$5.425

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DigiPath Technology Company

USA . 1,108 parts In-Stock

1+ parts

$5.389

100+ parts

$4.958

1k+ parts

-

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1,108

$5.389

$4.958

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ChromeModa Solutions

Germany . 1,733 parts In-Stock

1+ parts

$5.499

100+ parts

$4.509

1k+ parts

-

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1,733

$5.499

$4.509

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IDEA Electronic Components Group

UK . 241 parts In-Stock

1+ parts

$5.499

100+ parts

-

1k+ parts

$4.949

10k+ parts

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241

$5.499

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$4.949

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AZTECH Wire

Italy . 378 parts In-Stock

1+ parts

$12.685

100+ parts

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378

$12.685

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Corphita

USA . 1,372 parts In-Stock

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1,372

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Overview

Unlock the power of advanced technology with the SNJ54S473J by Texas Instruments. Manufactured with the highest quality materials and screening levels, this OTP ROM offers unparalleled reliability and performance. Ideal for military-grade applications, this product boasts a wide range of benefits, including fast access times and high memory density. Trust in Texas Instruments to provide you with cutting-edge solutions that exceed your expectations. Elevate your projects to the next level with the SNJ54S473J.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent protection for the OTP ROM, ensuring durability and reliability in various operating conditions.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures that the OTP ROM meets stringent quality standards, making it suitable for military and aerospace applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration and placement of the OTP ROM in electronic systems.

No. of Terminals: 20

With 20 terminals, the OTP ROM can support complex communication and data transfer requirements efficiently.

Package Style (Meter): IN-LINE

In-line package style offers a compact design, optimizing space utilization in electronic devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in extreme thermal conditions.

Organization: 512X8

512X8 organization provides ample memory capacity and data storage for various applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the OTP ROM to function effectively in cold environments.

Terminal Position: DUAL

Dual terminal position enhances connectivity and signal transmission capabilities of the OTP ROM.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliable operation in harsh environments and demanding applications.

Technology: TTL

TTL technology offers high-speed performance and compatibility with a wide range of electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and stable connections for the OTP ROM in circuit boards.

No. of Words: 512 words

With 512 words, the OTP ROM can store and retrieve large amounts of data efficiently.

Memory Width: 8

8-bit memory width allows for efficient data processing and storage in the OTP ROM.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm ensures compatibility with standard electronic connectors and sockets.

No. of Words Code: 512

512 words code provides a wide range of memory addresses for data storage and retrieval.

Memory Density: 4096 bit

High memory density of 4096 bits offers ample storage capacity for a variety of applications.

Memory IC Type: OTP ROM

OTP ROM memory type provides non-volatile data storage with one-time programmability, ensuring data security and integrity.

Maximum Access Time: 85 ns

Fast maximum access time of 85 ns enables quick data retrieval and processing in the OTP ROM.

Technical Specifications

OTP ROM SNJ54S473J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54S473J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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