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5962-01-131-9149

Texas Instruments

5962-01-131-9149 by Texas Instruments

Texas Instruments' 5962-01-131-9149 is a MILITARY-grade OTP ROM with 512x8 organization, 4096-bit memory density, and 70ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,596 parts In-Stock

1+ parts

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6,596

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Digiode

USA . 3,978 parts In-Stock

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3,978

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 968 parts In-Stock

1+ parts

$2.994

100+ parts

-

1k+ parts

$3.498

10k+ parts

-

968

$2.994

-

$3.498

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DigiPath Technology Company

USA . 748 parts In-Stock

1+ parts

$3.297

100+ parts

-

1k+ parts

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748

$3.297

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ChromeModa Solutions

Germany . 3,450 parts In-Stock

1+ parts

$3.364

100+ parts

$2.758

1k+ parts

-

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3,450

$3.364

$2.758

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IDEA Electronic Components Group

UK . 723 parts In-Stock

1+ parts

$3.364

100+ parts

-

1k+ parts

$3.028

10k+ parts

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723

$3.364

-

$3.028

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AZTECH Wire

Italy . 846 parts In-Stock

1+ parts

$15.342

100+ parts

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846

$15.342

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One Stop Electronics

USA . 716 parts In-Stock

1+ parts

$28.000

100+ parts

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716

$28.000

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Native Components

USA . 864 parts In-Stock

1+ parts

$40.838

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$39.204

864

$40.838

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$39.204

Northwest PG Solutions

USA . 514 parts In-Stock

1+ parts

$44.921

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514

$44.921

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Corphita

USA . 267 parts In-Stock

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267

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Overview

Experience unparalleled quality and reliability with the 5962-01-131-9149 by Texas Instruments, a cutting-edge OTP ROM designed to meet the highest industry standards. Manufactured by Texas Instruments, a renowned leader in semiconductor technology, this product offers exceptional performance and durability for a wide range of applications. Whether you're in aerospace, defense, or industrial sectors, this MILITARY-grade ROM ensures seamless operation even in extreme temperatures. Trust Texas Instruments to deliver superior products that bring value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat resistance, making this OTP ROM suitable for high operating temperatures.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and efficient packaging of the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V, this OTP ROM can easily integrate into existing systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM is reliable in harsh environments.

Organization: 512X8

Organized as 512 words of 8 bits each, providing ample memory capacity for various applications.

No. of Words: 512 words

With 512 words, this OTP ROM offers sufficient memory storage for storing program instructions or data.

Memory IC Type: OTP ROM

One-Time Programmable Read-Only Memory ensures secure and non-volatile storage of data or code.

Maximum Access Time: 70 ns

Low access time allows for fast retrieval of information from the OTP ROM, enhancing system performance.

Technical Specifications

OTP ROM 5962-01-131-9149 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-131-9149 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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