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5962-01-148-6134

Texas Instruments

5962-01-148-6134 by Texas Instruments

Texas Instruments' 5962-01-148-6134 is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 95ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,341 parts In-Stock

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Digiode

USA . 223 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 61 parts In-Stock

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Native Components

USA . 25 parts In-Stock

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$1.809

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25

$1.809

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Northwest PG Solutions

USA . 1,415 parts In-Stock

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$1.989

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Parana Technologies

USA . 1,920 parts In-Stock

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$3.067

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$3.583

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DigiPath Technology Company

USA . 1,718 parts In-Stock

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$3.377

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$3.107

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ChromeModa Solutions

Germany . 2,777 parts In-Stock

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$3.446

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$2.826

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$3.446

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IDEA Electronic Components Group

UK . 1,742 parts In-Stock

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$3.446

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$3.101

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AZTECH Wire

Italy . 557 parts In-Stock

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$7.638

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One Stop Electronics

USA . 314 parts In-Stock

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$27.000

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Corphita

USA . 2,764 parts In-Stock

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Supply Digital

USA . 2,735 parts In-Stock

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Overview

Unlock a world of possibilities with the 5962-01-148-6134 by Texas Instruments. Crafted with precision and expertise, this OTP ROM is designed to deliver top-notch performance and reliability. Ideal for a wide range of applications, this product offers seamless integration and unmatched efficiency. Experience the value of quality engineering with Texas Instruments, where innovation meets excellence. Upgrade your projects with the 5962-01-148-6134 and discover the difference it can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for the package body, making it suitable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with many electronic systems.

No. of Terminals: 20

Having 20 terminals provides ample connections for various interfaces and applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function effectively in a wide range of environments.

Organization: 512X8

The 512X8 organization offers a good balance between memory capacity and addressing capabilities.

Technology: TTL

Using TTL technology ensures compatibility with many digital systems and devices.

No. of Words: 512 words

The 512-word memory capacity allows for storing a significant amount of data or instructions.

Memory Width: 8

With a memory width of 8 bits, this OTP ROM can handle data in byte-sized chunks efficiently.

Memory Density: 4096 bit

The high memory density of 4096 bits ensures that this OTP ROM can store large amounts of information.

Maximum Access Time: 95 ns

The fast maximum access time of 95 ns enables quick retrieval of data when needed.

Technical Specifications

OTP ROM 5962-01-148-6134 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-148-6134 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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