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TBP24S41N

Texas Instruments

TBP24S41N by Texas Instruments

TBP24S41N by Texas Instruments is a 1KX4 OTP ROM with 4096 bit memory density. Operating at 5V, it has an access time of 60ns and operates in parallel mode. This rectangular package with through-hole terminals is ideal for commercial applications requiring non-volatile memory storage.

Median Price

$37.790

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 25 parts In-Stock

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$37.790

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Vyrian

USA . 7,785 parts In-Stock

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Digiode

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Sinequanon

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ICP Electronique

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ACDS - Activité Composants Distribution Service

France . 42 parts In-Stock

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ECAB

Sweden . 42 parts In-Stock

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Holdelec - ElecDif-Pro

France . 42 parts In-Stock

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ComSIT Distribution GmbH

Germany . 33 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 26 parts In-Stock

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A&K Electronics

USA . 25 parts In-Stock

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Rotakorn

Sweden . 25 parts In-Stock

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Bristol Electronics

USA . 25 parts In-Stock

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R&J Components

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EMSNET

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Electronic Expediters

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Pegasus Components GmbH

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Prism Electronics

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Parana Technologies

USA . 1,770 parts In-Stock

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$3.475

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$4.001

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$3.475

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DigiPath Technology Company

USA . 1,924 parts In-Stock

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$3.827

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$3.521

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ChromeModa Solutions

Germany . 6,155 parts In-Stock

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$3.905

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$3.202

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IDEA Electronic Components Group

UK . 1,686 parts In-Stock

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$3.514

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AZTECH Wire

Italy . 299 parts In-Stock

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$5.585

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One Stop Electronics

USA . 939 parts In-Stock

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$14.000

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Authorized Procurement Solutions

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Corphita

USA . 3,996 parts In-Stock

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Assy Fe

Spain . 34 parts In-Stock

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Kepictronics

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Perfect Parts

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Overview

Unlock endless possibilities with the Texas Instruments TBP24S41N OTP ROM. Manufactured by the reputable Texas Instruments, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, the TBP24S41N provides customers with a seamless experience, thanks to its innovative design and high performance. With a focus on value and benefits, this product is sure to exceed your expectations and deliver exceptional results every time. Experience the difference with the Texas Instruments TBP24S41N - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and resistant to damage during handling.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

No. of Words: 1024 words

With a large number of words, this OTP ROM can store a significant amount of data, making it suitable for applications that require a higher memory capacity.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, providing flexibility and efficiency in data retrieval and storage.

Technology: BIPOLAR

Bipolar technology offers fast access times and reliable performance, making this OTP ROM a reliable choice for applications that require quick response times.

Technical Specifications

OTP ROM TBP24S41N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T18

Length:

22.48 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24S41N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-050-6945, 5962010506945, 5962-01-050-6942, 5962010506942, 5962-01-050-6938, 5962010506938, 5962-01-050-6948, 5962010506948, 5962-01-050-6939, 5962010506939, 5962-01-053-0019, 5962010530019, 5962-01-138-5796, 5962011385796

NIIN

010506945, 010506942, 010506938, 010506948, 010506939, 010530019, 011385796

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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