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SN54186J

Texas Instruments

SN54186J by Texas Instruments

SN54186J by Texas Instruments is a 64x8 OTP ROM IC with 75ns access time. Operating b/w -55°C to 125°C, it has a max supply current of 120mA. Ideal for military-grade applications, this TTL technology chip comes in a ceramic rectangular package with 24 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,710 parts In-Stock

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4,710

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Digiode

USA . 4,578 parts In-Stock

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4,578

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Distributors (Availability)

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Parana Technologies

USA . 1,899 parts In-Stock

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$4.553

100+ parts

-

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$5.002

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1,899

$4.553

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$5.002

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One Stop Electronics

USA . 542 parts In-Stock

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$5.000

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542

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DigiPath Technology Company

USA . 2,244 parts In-Stock

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$5.014

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$4.613

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2,244

$5.014

$4.613

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ChromeModa Solutions

Germany . 6,932 parts In-Stock

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$5.116

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$4.195

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6,932

$5.116

$4.195

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IDEA Electronic Components Group

UK . 90 parts In-Stock

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$5.116

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$4.604

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90

$5.116

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$4.604

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AZTECH Wire

Italy . 782 parts In-Stock

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$19.276

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782

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Corphita

USA . 2,632 parts In-Stock

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Overview

Unlock the power of reliable data storage with the SN54186J by Texas Instruments. This OTP ROM chip offers high-quality performance with military-grade temperature tolerance, ensuring durability in any environment. Perfect for applications requiring secure and permanent memory storage, this chip provides 64 words of data with a fast access time of 75 ns. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs with precision and efficiency. Choose the SN54186J for unmatched value and peace of mind in your electronic projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides durability and heat resistance, ensuring the longevity and reliability of the OTP ROM.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuit designs and ensures compatibility with standard packaging methods.

No. of Terminals: 24

With 24 terminals, this OTP ROM can easily connect to other components in the circuit, enabling efficient data transfer and communication.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125°C ensures reliable performance even in harsh environmental conditions.

Organization: 64X8

64X8 organization allows for efficient storage and retrieval of data, making this OTP ROM suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C ensures that the OTP ROM can operate in extreme cold environments without any issues.

Temperature Grade: MILITARY

Military-grade temperature grade ensures that OTP ROM can perform reliably in rugged conditions and critical applications where temperature fluctuations are common.

Technology: TTL

TTL technology offers fast response times and low power consumption, making this OTP ROM an efficient choice for applications requiring high-speed data processing.

Maximum Supply Current: 120 mA

With a maximum supply current of 120 mA, this OTP ROM consumes minimal power, contributing to energy efficiency and prolonging battery life in portable devices.

Memory Width: 8

Memory width of 8 ensures that the OTP ROM can store and retrieve data in 8-bit chunks, enabling efficient data processing and compatibility with various systems.

No. of Words: 64 words

With 64 words of storage capacity, this OTP ROM can store a significant amount of data, making it suitable for applications requiring medium to large memory storage.

Maximum Access Time: 75 ns

Fast maximum access time of 75 nanoseconds ensures quick retrieval of data, enhancing the performance of the OTP ROM in high-speed applications.

Technical Specifications

OTP ROM SN54186J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

64 words

No. of Words Code:

64

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

120 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN54186J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-14-478-7773, 5962144787773

NIIN

144787773

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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