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SN54S450J

Texas Instruments

SN54S450J by Texas Instruments

SN54S450J by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density. Operating at 5V, it has a temperature range of -55 to 125°C, making it suitable for military-grade applications. With a package style of IN-LINE and through-hole terminal form, it offers reliable performance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,112 parts In-Stock

1+ parts

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5,112

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Digiode

USA . 4,485 parts In-Stock

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4,485

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,215 parts In-Stock

1+ parts

$2.000

100+ parts

-

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1,215

$2.000

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Parana Technologies

USA . 1,764 parts In-Stock

1+ parts

$4.483

100+ parts

-

1k+ parts

$4.921

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1,764

$4.483

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$4.921

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DigiPath Technology Company

USA . 781 parts In-Stock

1+ parts

$4.936

100+ parts

$4.541

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-

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781

$4.936

$4.541

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ChromeModa Solutions

Germany . 3,674 parts In-Stock

1+ parts

$5.037

100+ parts

$4.130

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3,674

$5.037

$4.130

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IDEA Electronic Components Group

UK . 1,226 parts In-Stock

1+ parts

$5.037

100+ parts

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1k+ parts

$4.533

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1,226

$5.037

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$4.533

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AZTECH Wire

Italy . 611 parts In-Stock

1+ parts

$16.981

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611

$16.981

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Corphita

USA . 3,263 parts In-Stock

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3,263

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Overview

Unlock the power of reliable data storage with the SN54S450J by Texas Instruments. Built with top-quality materials and cutting-edge technology, this OTP ROM offers unparalleled performance and durability. Ideal for military-grade applications, this rectangular package delivers a seamless experience with its 1Kx8 organization and 8192-bit memory density. Trust in Texas Instruments to provide you with the best-in-class solutions for all your memory needs. Elevate your projects with the SN54S450J and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides durability and heat resistance, making the product reliable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage of 5V, compatible with many systems and easy to integrate.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the product to function effectively in various environments.

Technology: TTL

Uses Transistor-Transistor Logic technology for reliable and fast operation, ideal for high-performance applications.

Memory Density: 8192 bit

Provides a high memory density, allowing for storage of a large amount of data in a compact design.

Technical Specifications

OTP ROM SN54S450J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN54S450J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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