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SN54S3708J

Texas Instruments

SN54S3708J by Texas Instruments

SN54S3708J by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density and TTL technology. It operates b/w -55°C to 125°C, making it suitable for military-grade applications. The package style is in-line with a rectangular ceramic body, featuring 24 terminals in dual position through-hole form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,389 parts In-Stock

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8,389

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Digiode

USA . 3,718 parts In-Stock

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3,718

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Distributors (Availability)

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Parana Technologies

USA . 1,510 parts In-Stock

1+ parts

$3.855

100+ parts

-

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$4.339

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1,510

$3.855

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$4.339

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ChromeModa Solutions

Germany . 1,017 parts In-Stock

1+ parts

$4.331

100+ parts

$3.551

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1,017

$4.331

$3.551

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IDEA Electronic Components Group

UK . 204 parts In-Stock

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$4.331

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$3.898

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204

$4.331

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$3.898

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AZTECH Wire

Italy . 228 parts In-Stock

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$8.567

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228

$8.567

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One Stop Electronics

USA . 1,272 parts In-Stock

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$9.000

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$9.000

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Corphita

USA . 2,321 parts In-Stock

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DigiPath Technology Company

USA . 1,303 parts In-Stock

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$3.905

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$3.905

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the SN54S3708J OTP ROM. This military-grade memory IC offers 8192 bits of memory density in a compact 24-terminal package, making it ideal for demanding applications where data integrity is paramount. With a wide operating temperature range and TTL technology, this OTP ROM ensures optimal performance in extreme conditions. Trust Texas Instruments for cutting-edge technology and unmatched value in memory solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers good thermal conductivity and high resistance to heat, making it suitable for high temperature environments.

No. of Terminals: 24

Sufficient number of terminals for connecting to external circuits and peripherals.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures without performance degradation.

Organization: 1KX8

Organized in 1K x 8 configuration, offering a total of 1024 words with a width of 8 memory bits each.

Technology: TTL

Uses Transistor-Transistor Logic technology known for its reliability and compatibility with various digital systems.

No. of Words: 1024 words

Provides a decent amount of memory capacity for storing program data or instructions.

Terminal Pitch: 2.54 mm

Standard terminal pitch for easy integration into existing circuit boards or systems.

Memory Density: 8192 bit

Offers a high memory density for storing a significant amount of data or instructions.

Technical Specifications

OTP ROM SN54S3708J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN54S3708J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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