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SNC54S475W

Texas Instruments

SNC54S475W by Texas Instruments

The Texas Instruments SNC54S475W is a MIL-STD-883 Class B OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. Ideal for military applications due to its MILITARY temperature grade and flatpack package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,794 parts In-Stock

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4,794

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Digiode

USA . 2,175 parts In-Stock

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2,175

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 197 parts In-Stock

1+ parts

$2.326

100+ parts

-

1k+ parts

$2.824

10k+ parts

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197

$2.326

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$2.824

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DigiPath Technology Company

USA . 1,733 parts In-Stock

1+ parts

$2.562

100+ parts

$2.357

1k+ parts

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1,733

$2.562

$2.357

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IDEA Electronic Components Group

UK . 2,246 parts In-Stock

1+ parts

$2.614

100+ parts

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1k+ parts

$2.353

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2,246

$2.614

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$2.353

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ChromeModa Solutions

Germany . 1,170 parts In-Stock

1+ parts

$2.614

100+ parts

$2.143

1k+ parts

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1,170

$2.614

$2.143

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One Stop Electronics

USA . 767 parts In-Stock

1+ parts

$7.000

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767

$7.000

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AZTECH Wire

Italy . 290 parts In-Stock

1+ parts

$10.856

100+ parts

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290

$10.856

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Corphita

USA . 3,938 parts In-Stock

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3,938

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Overview

Unleash the power of cutting-edge technology with the Texas Instruments SNC54S475W OTP ROM. As a leader in semiconductor manufacturing, Texas Instruments guarantees top-notch quality and reliability. Designed for military-grade applications, this versatile product offers 512x8 organization and fast access time of just 85 ns. With a wide operating temperature range and flatpack package style, the SNC54S475W is perfect for demanding environments. Experience the value and benefits of this high-performance memory IC, trusted by professionals worldwide for its unparalleled performance and durability.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent thermal conductivity and durability, ensuring reliable performance in harsh environments.

Surface Mount: YES

Ease of installation and integration on circuit boards, saving time and cost in manufacturing processes.

Screening Level: MIL-STD-883 Class B (Modified)

Meets military standards for reliable operation in demanding applications, ensuring quality and performance.

Package Shape: RECTANGULAR

Compact and space-efficient design for easy placement and mounting on PCBs.

No. of Terminals: 24

Sufficient number of terminals for connecting to external circuitry and interfaces, offering versatility in applications.

Package Style (Meter): FLATPACK

Flatpack design allows for efficient heat dissipation and compact layout on circuit boards.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance for operation in extreme conditions without compromising performance.

Organization: 512X8

Organized as 512 words of 8 bits each, providing a good balance of memory capacity and data width for various applications.

Minimum Operating Temperature: -55 °C

Low operating temperature limit ensures functionality in cold environments or under temperature fluctuations.

Terminal Position: DUAL

Dual terminal position for enhanced connectivity and signal routing in complex electronic systems.

Temperature Grade: MILITARY

Military-grade temperature specifications ensure reliable performance in critical and harsh environments.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, making it suitable for high-speed data processing applications.

Terminal Form: FLAT

Flat terminal design for easy soldering and secure connections in circuit assembly.

Maximum Supply Current: 155 mA

Low supply current requirement for efficient power consumption and extended battery life in portable devices.

No. of Words: 512 words

Ample memory capacity for storing and processing data in a wide range of applications.

Memory Width: 8

8-bit memory width allows for flexible data handling and manipulation, supporting various data formats and operations.

Terminal Pitch: 1.27 mm

Fine terminal pitch for compact layout and high-density integration on circuit boards, saving space and enabling complex designs.

No. of Words Code: 512

512 words code for efficient addressing and access to data within the memory array.

Memory Density: 4096 bit

High memory density for storing a large amount of data in a small footprint, ideal for space-constrained applications.

Memory IC Type: OTP ROM

One-Time Programmable Read-Only Memory (OTP ROM) offers secure and permanent data storage, ensuring data integrity and preventing unauthorized changes.

Maximum Access Time: 85 ns

Fast access time for quick retrieval of data, supporting high-speed data processing and real-time applications.

Technical Specifications

OTP ROM SNC54S475W attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDFP-F24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL24,.4

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S475W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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