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SNC54S3708J

Texas Instruments

SNC54S3708J by Texas Instruments

SNC54S3708J by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 1KX8 organization, 8192-bit memory density, and TTL technology. It operates b/w -55°C to 125°C, making it ideal for military applications requiring reliable data storage in harsh environments. The package style is IN-LINE with 24 terminals on a RECTANGULAR CERAMIC body.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,974 parts In-Stock

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6,974

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Digiode

USA . 154 parts In-Stock

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154

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Distributors (Availability)

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Parana Technologies

USA . 1,447 parts In-Stock

1+ parts

$4.768

100+ parts

-

1k+ parts

$5.272

10k+ parts

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1,447

$4.768

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$5.272

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AZTECH Wire

Italy . 576 parts In-Stock

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$5.057

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576

$5.057

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IDEA Electronic Components Group

UK . 2,184 parts In-Stock

1+ parts

$5.357

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$4.821

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2,184

$5.357

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$4.821

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ChromeModa Solutions

Germany . 1,971 parts In-Stock

1+ parts

$5.357

100+ parts

$4.393

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1,971

$5.357

$4.393

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One Stop Electronics

USA . 757 parts In-Stock

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$23.000

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757

$23.000

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Corphita

USA . 2,709 parts In-Stock

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2,709

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DigiPath Technology Company

USA . 1,253 parts In-Stock

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$4.830

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1,253

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$4.830

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Overview

Discover the reliable and high-quality SNC54S3708J by Texas Instruments, a top-of-the-line OTP ROM that offers unparalleled performance and durability. With Texas Instruments' trusted reputation for excellence in manufacturing, this product is perfect for a wide range of applications in military-grade settings. Experience the value and benefits of this product, from its efficient memory density to its temperature grade suitability. Trust in Texas Instruments to provide you with cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers high temperature resistance and durability, making it suitable for military-grade applications where reliability is essential.

Screening Level: MIL-STD-883 Class B (Modified)

Compliance with MIL-STD-883 Class B ensures that the product meets stringent quality and reliability standards, making it ideal for use in mission-critical scenarios.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy integration into existing systems.

No. of Terminals: 24

Having 24 terminals provides flexibility in connecting the ROM to other components and peripherals, enhancing overall system functionality.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the ROM can withstand harsh environmental conditions without compromising performance.

Organization: 1KX8

The organization of 1KX8 indicates that the ROM has a capacity of 1024 words, allowing for significant data storage capacity.

Technology: TTL

TTL technology offers fast and reliable data transmission, making this OTP ROM suitable for applications that require high-speed processing.

Memory Width: 8

With a memory width of 8, the ROM can process data efficiently in 8-bit chunks, enhancing overall system performance.

Temperature Grade: MILITARY

Designed for military-grade applications, this OTP ROM can operate in extreme temperature ranges and harsh environments without sacrificing performance.

Memory Density: 8192 bit

With a memory density of 8192 bits, this OTP ROM offers ample storage space for critical data in military and aerospace applications.

Technical Specifications

OTP ROM SNC54S3708J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S3708J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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