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SN74S478JP4

Texas Instruments

SN74S478JP4 by Texas Instruments

SN74S478JP4 by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density and 70ns max access time. It operates at a nominal voltage of 5V, suitable for commercial-grade applications requiring reliable non-volatile memory storage in a ceramic rectangular package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,711 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,711

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Digiode

USA . 425 parts In-Stock

1+ parts

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1k+ parts

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425

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,362 parts In-Stock

1+ parts

$2.551

100+ parts

$236.875

1k+ parts

$2.296

10k+ parts

-

2,362

$2.551

$236.875

$2.296

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DigiPath Technology Company

USA . 1,793 parts In-Stock

1+ parts

$2.809

100+ parts

-

1k+ parts

-

10k+ parts

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1,793

$2.809

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ChromeModa Solutions

Germany . 4,664 parts In-Stock

1+ parts

$2.866

100+ parts

$2.350

1k+ parts

-

10k+ parts

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4,664

$2.866

$2.350

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IDEA Electronic Components Group

UK . 1,080 parts In-Stock

1+ parts

$2.866

100+ parts

-

1k+ parts

$2.579

10k+ parts

-

1,080

$2.866

-

$2.579

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AZTECH Wire

Italy . 534 parts In-Stock

1+ parts

$18.198

100+ parts

-

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534

$18.198

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One Stop Electronics

USA . 1,103 parts In-Stock

1+ parts

$24.000

100+ parts

-

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1,103

$24.000

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Corphita

USA . 301 parts In-Stock

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301

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Overview

Discover the SN74S478JP4 by Texas Instruments, a high-quality OTP ROM that offers reliability and performance. Texas Instruments is known for its innovative technology and trusted products. This OTP ROM is versatile and can be used in various applications, providing customers with value and flexibility. With a nominal supply voltage of 5V and a memory density of 8192 bits, this product offers fast access times and efficient operation. Trust Texas Instruments to deliver top-notch quality and reliability with the SN74S478JP4.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides durability and better protection for the internal components, making this product suitable for rugged environments.

Nominal Supply Voltage / Vsup (V): 5

Operates on a standard voltage supply of 5V, making it compatible with most electronic systems.

No. of Terminals: 24

Sufficient number of terminals for connectivity, allowing for easy integration into existing systems.

Memory Width: 8

8-bit memory width allows for efficient data storage and retrieval, enhancing the performance of the product.

Maximum Operating Temperature: 70 °C

Wide operating temperature range of up to 70°C ensures reliable performance in varied environmental conditions.

Technology: TTL

TTL technology offers fast and reliable data transmission, making this product ideal for applications requiring high-speed communication.

Technical Specifications

OTP ROM SN74S478JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S478JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-248-0235, 5962012480235

NIIN

012480235

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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