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SN74S471N

Texas Instruments

SN74S471N by Texas Instruments

SN74S471N by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and consumes up to 155mA. This TTL technology chip in an in-line package is ideal for commercial applications requiring non-volatile memory storage.

Median Price

$17.980

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$17.980

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Vyrian

USA . 3,569 parts In-Stock

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Digiode

USA . 3,511 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 747 parts In-Stock

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ICP Electronique

France . 19 parts In-Stock

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Goldney Electronics S.L.

Spain . 9 parts In-Stock

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GES GmbH

Germany . 9 parts In-Stock

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ECAB

Sweden . 8 parts In-Stock

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Parana Technologies

USA . 867 parts In-Stock

1+ parts

$4.402

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$4.822

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867

$4.402

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$4.822

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ChromeModa Solutions

Germany . 5,155 parts In-Stock

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$4.946

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$4.056

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IDEA Electronic Components Group

UK . 1,381 parts In-Stock

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$4.946

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$4.451

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AZTECH Wire

Italy . 408 parts In-Stock

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$17.167

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One Stop Electronics

USA . 148 parts In-Stock

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$21.000

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Corphita

USA . 1,269 parts In-Stock

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DigiPath Technology Company

USA . 381 parts In-Stock

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$4.459

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality SN74S471N OTP ROM by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures reliability and performance. This versatile component is perfect for applications such as data storage, microcontrollers, and embedded systems. With its 256x8 organization and fast access time of 70ns, this OTP ROM offers unmatched value and efficiency. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the SN74S471N and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protects the ROM from external elements, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this OTP ROM compatible with a wide range of systems and applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can withstand high temperatures without compromising performance.

Organization: 256X8

The 256X8 organization means that this OTP ROM has 256 memory words, each with a width of 8 bits, providing ample storage capacity for data.

Technology: TTL

Utilizing TTL technology ensures high-speed data transfers and reliable performance in various digital systems and devices.

Memory Density: 2048 bit

With a memory density of 2048 bits, this OTP ROM can store a significant amount of data, making it suitable for a wide range of applications.

Maximum Access Time: 70 ns

The maximum access time of 70 ns ensures fast data retrieval, enhancing system efficiency and performance.

Technical Specifications

OTP ROM SN74S471N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S471N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-093-8840, 5962010938840, 5962-01-087-6737, 5962010876737, 5962-01-085-7965, 5962010857965, 5962-01-125-0786, 5962011250786, 5962-01-093-8832, 5962010938832, 5962-99-744-1468, 5962997441468

NIIN

010938840, 010876737, 010857965, 011250786, 010938832, 997441468

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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