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SN74S188J4

Texas Instruments

SN74S188J4 by Texas Instruments

SN74S188J4 by Texas Instruments is a 32x8 OTP ROM with 40ns access time. Operating at 5V, it has a max supply current of 110mA. Ideal for commercial applications requiring fast memory retrieval in a ceramic rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,092 parts In-Stock

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Digiode

USA . 977 parts In-Stock

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One Stop Electronics

USA . 555 parts In-Stock

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$5.000

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555

$5.000

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Parana Technologies

USA . 119 parts In-Stock

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$5.095

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$5.677

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119

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ChromeModa Solutions

Germany . 5,687 parts In-Stock

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$5.725

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$4.694

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$5.725

$4.694

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IDEA Electronic Components Group

UK . 81 parts In-Stock

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$5.725

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$5.152

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81

$5.725

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AZTECH Wire

Italy . 808 parts In-Stock

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$11.797

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808

$11.797

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Corphita

USA . 1,142 parts In-Stock

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DigiPath Technology Company

USA . 751 parts In-Stock

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$5.162

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Overview

Unlock the power of reliable data storage with the SN74S188J4 OTP ROM by Texas Instruments. Crafted with precision and expertise, this ceramic package offers a seamless solution for a wide range of applications. With a nominal supply voltage of 5V and 32X8 organization, this innovative technology guarantees optimal performance in commercial-grade environments. Experience the benefits of fast access time, low supply current, and robust terminal form with the SN74S188J4 - the perfect choice for your memory IC needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat resistance and durability, ensuring long-term reliability for the OTP ROM product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with a wide range of existing systems and applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this OTP ROM can function reliably in various environmental conditions.

Organization: 32X8

The 32X8 organization allows for efficient storage and retrieval of data in a structured manner, enhancing overall performance.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data processing, making this OTP ROM suitable for high-performance applications.

No. of Words: 32 words

Having a capacity of 32 words enables storing a substantial amount of data, making it versatile for diverse applications.

Memory Width: 8

A memory width of 8 bits allows for processing data in chunks, improving efficiency and speed for data transfer and retrieval.

Terminal Pitch: 2.54 mm

The standard 2.54mm terminal pitch simplifies integration and compatibility with common connector types, facilitating easy installation.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory ensures data security and integrity, making it suitable for applications where data protection is critical.

Maximum Access Time: 40 ns

The fast maximum access time of 40 nanoseconds allows for quick data retrieval, enhancing overall system performance and responsiveness.

Technical Specifications

OTP ROM SN74S188J4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S188J4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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