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SN74S478N3

Texas Instruments

SN74S478N3 by Texas Instruments

SN74S478N3 by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density. It operates at 5V, has a max access time of 70ns, and uses TTL technology. This rectangular package with 24 terminals is ideal for commercial applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,906 parts In-Stock

1+ parts

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3,906

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Digiode

USA . 1,081 parts In-Stock

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1,081

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,874 parts In-Stock

1+ parts

$3.647

100+ parts

-

1k+ parts

$4.156

10k+ parts

-

1,874

$3.647

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$4.156

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ChromeModa Solutions

Germany . 3,697 parts In-Stock

1+ parts

$4.098

100+ parts

$3.360

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-

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3,697

$4.098

$3.360

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IDEA Electronic Components Group

UK . 42 parts In-Stock

1+ parts

$4.098

100+ parts

-

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$3.688

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42

$4.098

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$3.688

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AZTECH Wire

Italy . 330 parts In-Stock

1+ parts

$17.785

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330

$17.785

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One Stop Electronics

USA . 1,539 parts In-Stock

1+ parts

$19.000

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1,539

$19.000

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Corphita

USA . 1,053 parts In-Stock

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1,053

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DigiPath Technology Company

USA . 81 parts In-Stock

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$3.695

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81

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$3.695

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Overview

Unlock the power of data storage with the SN74S478N3 by Texas Instruments, a high-quality OTP ROM that offers unmatched reliability and performance. Designed by the trusted manufacturer Texas Instruments, this device is perfect for applications where secure and permanent data storage is essential. With a package body made of durable PLASTIC/EPOXY material and a convenient RECTANGULAR shape, this OTP ROM boasts a nominal supply voltage of 5V and an organization of 1KX8. Trust in Texas Instruments to deliver cutting-edge technology and seamless integration with a wide range of devices. Experience the value and benefits of the SN74S478N3 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protection for the internal components of the OTP ROM, making it suitable for various operating environments.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides a stable power source for the OTP ROM, ensuring consistent and reliable performance.

No. of Terminals: 24

With 24 terminals, this OTP ROM offers versatile connectivity options, allowing for easy integration into different electronic systems.

Memory Width: 8

The memory width of 8 bits allows for efficient data storage and retrieval, making the OTP ROM suitable for applications requiring moderate memory capacity.

Technology: TTL

The use of TTL technology ensures high-speed data processing and low power consumption, making the OTP ROM an energy-efficient choice for various electronic devices.

Technical Specifications

OTP ROM SN74S478N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S478N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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