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SNM54S472J

Texas Instruments

SNM54S472J by Texas Instruments

SNM54S472J by Texas Instruments is a MIL-STD-883 Class C OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. It operates at temperatures ranging from -55 to 125°C and has a supply voltage of 5V. Ideal for military applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,580 parts In-Stock

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4,580

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Digiode

USA . 4,348 parts In-Stock

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4,348

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Distributors (Availability)

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Parana Technologies

USA . 1,401 parts In-Stock

1+ parts

$3.196

100+ parts

-

1k+ parts

$3.719

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1,401

$3.196

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$3.719

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DigiPath Technology Company

USA . 410 parts In-Stock

1+ parts

$3.519

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-

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410

$3.519

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ChromeModa Solutions

Germany . 4,897 parts In-Stock

1+ parts

$3.591

100+ parts

$2.945

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4,897

$3.591

$2.945

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IDEA Electronic Components Group

UK . 352 parts In-Stock

1+ parts

$3.591

100+ parts

-

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$3.232

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352

$3.591

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$3.232

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AZTECH Wire

Italy . 402 parts In-Stock

1+ parts

$16.779

100+ parts

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402

$16.779

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One Stop Electronics

USA . 223 parts In-Stock

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$17.000

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223

$17.000

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Corphita

USA . 2,567 parts In-Stock

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2,567

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Overview

Upgrade your electronic devices with the SNM54S472J from Texas Instruments, a leading manufacturer in the industry. This OTP ROM offers unparalleled quality and reliability, making it perfect for military-grade applications. With a memory density of 4096 bits and a fast access time of 85 nanoseconds, this product provides exceptional performance and value to customers. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity and mechanical strength, ensuring durability and reliability for the OTP ROM.

Screening Level: MIL-STD-883 Class C

Meeting MIL-STD-883 Class C screening level indicates high quality and reliability, making this OTP ROM suitable for demanding military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supplies and simplifies integration into existing systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can function reliably in harsh environmental conditions without compromising performance.

Organization: 512X8

The 512x8 organization of this OTP ROM provides a balance between memory capacity and access speed, making it suitable for a wide range of applications.

Technology: TTL

Utilizing TTL technology ensures compatibility with other TTL components and enables seamless communication within digital systems.

Memory Density: 4096 bit

Offering a memory density of 4096 bits, this OTP ROM can store a significant amount of data in a compact form factor, making it efficient for memory-intensive applications.

Memory IC Type: OTP ROM

Being an OTP (One-Time Programmable) ROM eliminates the need for external programming equipment, simplifying the manufacturing process and reducing costs.

Maximum Access Time: 85 ns

With a maximum access time of 85 nanoseconds, this OTP ROM provides fast read speeds, enabling quick access to stored data for efficient operation.

Technical Specifications

OTP ROM SNM54S472J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class C

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNM54S472J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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