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SNM54S473J

Texas Instruments

SNM54S473J by Texas Instruments

SNM54S473J by Texas Instruments is a MIL-STD-883 Class C OTP ROM with 512x8 organization and 4096-bit memory density. It operates b/w -55°C to 125°C, has a max access time of 85ns, and is ideal for military-grade applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,791 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,791

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Vyrian

USA . 2,706 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,706

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 404 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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-

404

$1.000

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-

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Parana Technologies

USA . 80 parts In-Stock

1+ parts

$4.319

100+ parts

-

1k+ parts

$4.742

10k+ parts

-

80

$4.319

-

$4.742

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DigiPath Technology Company

USA . 141 parts In-Stock

1+ parts

$4.756

100+ parts

$4.375

1k+ parts

-

10k+ parts

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141

$4.756

$4.375

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ChromeModa Solutions

Germany . 5,705 parts In-Stock

1+ parts

$4.853

100+ parts

$3.979

1k+ parts

-

10k+ parts

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5,705

$4.853

$3.979

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IDEA Electronic Components Group

UK . 83 parts In-Stock

1+ parts

$4.853

100+ parts

-

1k+ parts

$4.368

10k+ parts

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83

$4.853

-

$4.368

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AZTECH Wire

Italy . 649 parts In-Stock

1+ parts

$6.149

100+ parts

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649

$6.149

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Corphita

USA . 3,587 parts In-Stock

1+ parts

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3,587

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Overview

Unlock endless possibilities with the Texas Instruments SNM54S473J OTP ROM. Renowned for its high quality and reliability, Texas Instruments delivers cutting-edge technology in a durable ceramic package. Ideal for military-grade applications, this versatile memory IC offers 512x8 organization and lightning-fast access time of 85ns. Whether you're designing aerospace systems or industrial machinery, the SNM54S473J provides unmatched performance and value to meet your unique needs. Trust in Texas Instruments to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and heat dissipation, making the product durable and reliable for use in high-temperature environments.

Screening Level: MIL-STD-883 Class C

Compliance with MIL-STD-883 Class C ensures high quality and reliability of the product, meeting strict military standards for performance and durability.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and installation in electronic devices, optimizing space efficiency and overall design aesthetics.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand elevated temperatures without compromising performance, ideal for demanding applications.

Technology: TTL

The use of TTL technology ensures fast and efficient operation of the OTP ROM, providing reliable data storage and retrieval capabilities for enhanced system performance.

Technical Specifications

OTP ROM SNM54S473J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class C

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNM54S473J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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