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SN74S472J

Texas Instruments

SN74S472J by Texas Instruments

SN74S472J by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density and 75ns max access time. It operates at 5V, has a temp range of 0-70°C, and uses TTL technology. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,481 parts In-Stock

1+ parts

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4,481

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Vyrian

USA . 3,717 parts In-Stock

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3,717

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GES GmbH

Germany . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 381 parts In-Stock

1+ parts

$3.127

100+ parts

$290.432

1k+ parts

$2.815

10k+ parts

-

381

$3.127

$290.432

$2.815

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DigiPath Technology Company

USA . 1,702 parts In-Stock

1+ parts

$3.444

100+ parts

-

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10k+ parts

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1,702

$3.444

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ChromeModa Solutions

Germany . 996 parts In-Stock

1+ parts

$3.514

100+ parts

$2.881

1k+ parts

-

10k+ parts

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996

$3.514

$2.881

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IDEA Electronic Components Group

UK . 131 parts In-Stock

1+ parts

$3.514

100+ parts

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1k+ parts

$3.163

10k+ parts

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131

$3.514

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$3.163

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AZTECH Wire

Italy . 623 parts In-Stock

1+ parts

$17.315

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623

$17.315

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One Stop Electronics

USA . 1,445 parts In-Stock

1+ parts

$27.000

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1,445

$27.000

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Corphita

USA . 4,635 parts In-Stock

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4,635

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Overview

Unlock the power of reliable and high-quality data storage with the SN74S472J by Texas Instruments. This OTP ROM chip offers unparalleled performance and durability, thanks to the trusted reputation of its manufacturer. Ideal for a wide range of applications, this versatile product provides users with a seamless experience, ensuring fast and efficient data retrieval. Invest in the SN74S472J today and discover the unmatched value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent durability and protection, making this OTP ROM suitable for rugged environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this OTP ROM compatible with common power supply systems.

No. of Words: 512 words

With a large capacity of 512 words, this OTP ROM can store a significant amount of data efficiently.

Technology: TTL

Using TTL technology ensures compatibility with a wide range of devices and systems, enhancing versatility.

Memory IC Type: OTP ROM

Being a ROM (Read-Only Memory) ensures data retention without the need for power, ideal for storing critical firmware or configuration information.

Maximum Access Time: 75 ns

Fast access time of 75 nanoseconds allows for quick retrieval of data, making this OTP ROM suitable for applications requiring rapid response.

Technical Specifications

OTP ROM SN74S472J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S472J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-084-0312, 5962010840312, 5962-01-114-2077, 5962011142077, 5962-01-218-8488, 5962012188488, 5962-01-218-8479, 5962012188479, 5962-01-225-9118, 5962012259118, 5962-01-218-8478, 5962012188478, 5962-01-218-8483, 5962012188483, 5962-01-218-8490, 5962012188490, 5962-01-218-8480, 5962012188480, 5962-01-218-8487, 5962012188487, 5962-01-219-3781, 5962012193781, 5962-01-114-2078, 5962011142078, 5962-01-218-8489, 5962012188489, 5962-01-218-8481, 5962012188481, 5962-01-218-8482, 5962012188482, 5962-01-225-9117, 5962012259117, 5962-01-218-8486, 5962012188486, 5962-01-218-8485, 5962012188485, 5962-01-218-8484, 5962012188484, 5962-01-270-4043, 5962012704043

NIIN

010840312, 011142077, 012188488, 012188479, 012259118, 012188478, 012188483, 012188490, 012188480, 012188487, 012193781, 011142078, 012188489, 012188481, 012188482, 012259117, 012188486, 012188485, 012188484, 012704043

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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