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TBP28L166N1

Texas Instruments

TBP28L166N1 by Texas Instruments

TBP28L166N1 by Texas Instruments is a 2Kx8 OTP ROM memory IC with 16384-bit density. Operating at 5V, it has a temperature range of 0-70°C and comes in a 24-terminal IN-LINE package. Ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,174 parts In-Stock

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4,174

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Digiode

USA . 560 parts In-Stock

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560

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One Stop Electronics

USA . 340 parts In-Stock

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$4.000

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340

$4.000

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Parana Technologies

USA . 1,587 parts In-Stock

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$5.154

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$5.752

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1,587

$5.154

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$5.752

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DigiPath Technology Company

USA . 1,497 parts In-Stock

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$5.675

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1,497

$5.675

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ChromeModa Solutions

Germany . 1,940 parts In-Stock

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$5.791

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$4.749

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1,940

$5.791

$4.749

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IDEA Electronic Components Group

UK . 300 parts In-Stock

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$5.791

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$5.212

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300

$5.791

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$5.212

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AZTECH Wire

Italy . 611 parts In-Stock

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$17.670

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611

$17.670

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Corphita

USA . 611 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the Texas Instruments TBP28L166N1 OTP ROM, a cutting-edge memory solution designed for a wide range of applications. Texas Instruments, a leader in semiconductor technology, delivers exceptional quality and innovation in every product. This OTP ROM offers customers unmatched value with its 2Kx8 organization, 2048 words, and 16384 bit memory density. Whether you're looking to enhance your industrial, automotive, or consumer electronics designs, this product provides the speed, efficiency, and durability you need to stay ahead of the competition. Trust Texas Instruments to elevate your projects to new heights with the TBP28L166N1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this OTP ROM lightweight and durable, ideal for various applications.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with most standard power supplies, making integration easy and straightforward.

No. of Terminals: 24

With 24 terminals, this OTP ROM provides ample connectivity options for interfacing with other components or systems.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliability and stability even in demanding environments.

Organization: 2KX8

The 2KX8 organization allows for efficient data storage and retrieval, making this OTP ROM a reliable choice for memory applications.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer, making this OTP ROM suitable for high-performance applications.

No. of Words: 2048 words

With 2048 words of memory capacity, this OTP ROM can store a significant amount of data, making it versatile for different use cases.

Memory Width: 8

The memory width of 8 bits allows for efficient data handling and processing, enhancing the overall performance of this OTP ROM.

Technical Specifications

OTP ROM TBP28L166N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L166N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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