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TBP24SA41NP3

Texas Instruments

TBP24SA41NP3 by Texas Instruments

TBP24SA41NP3 by Texas Instruments is a 1KX4 OTP ROM memory IC with 4096-bit memory density. It operates at temperatures b/w 0°C to 70°C, featuring a max access time of 60 ns. This device, housed in an IN-LINE package style, is ideal for applications requiring reliable non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,964 parts In-Stock

1+ parts

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4,964

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Vyrian

USA . 2,745 parts In-Stock

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2,745

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 921 parts In-Stock

1+ parts

$3.408

100+ parts

-

1k+ parts

$3.934

10k+ parts

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921

$3.408

-

$3.934

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DigiPath Technology Company

USA . 185 parts In-Stock

1+ parts

$3.752

100+ parts

$3.452

1k+ parts

-

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185

$3.752

$3.452

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IDEA Electronic Components Group

UK . 2,016 parts In-Stock

1+ parts

$3.829

100+ parts

-

1k+ parts

$3.446

10k+ parts

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2,016

$3.829

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$3.446

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ChromeModa Solutions

Germany . 692 parts In-Stock

1+ parts

$3.829

100+ parts

$3.140

1k+ parts

-

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692

$3.829

$3.140

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One Stop Electronics

USA . 594 parts In-Stock

1+ parts

$6.000

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594

$6.000

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AZTECH Wire

Italy . 277 parts In-Stock

1+ parts

$6.684

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277

$6.684

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Corphita

USA . 1,617 parts In-Stock

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1,617

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Overview

Unlock the power of reliable data storage with the TBP24SA41NP3 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-notch quality in their OTP ROM products. This versatile device is perfect for a wide range of applications, offering customers a valuable solution for their memory storage needs. With its durable plastic/epoxy package body material and efficient design, the TBP24SA41NP3 provides a seamless user experience while ensuring data integrity. Trust Texas Instruments to provide you with the best-in-class technology for your memory storage requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the OTP ROM, making it suitable for various environments.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration and placement of the OTP ROM in electronic devices or systems.

No. of Terminals: 18

Having 18 terminals enables easy connectivity and compatibility with a wide range of devices or systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the OTP ROM can function efficiently in most operating conditions.

Organization: 1KX4

The 1KX4 organization allows for organized and efficient storage and retrieval of data in the OTP ROM.

Technology: TTL

TTL technology provides reliable and fast data transmission and processing capabilities in the OTP ROM.

No. of Words: 1024 words

Having 1024 words allows for a decent amount of data storage capacity in the OTP ROM.

Memory IC Type: OTP ROM

Being an OTP ROM type memory IC ensures that the data stored in the OTP ROM is secure and cannot be altered or erased.

Maximum Access Time: 60 ns

With a maximum access time of 60 nanoseconds, the OTP ROM can quickly retrieve data when needed, enhancing overall system performance.

Technical Specifications

OTP ROM TBP24SA41NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA41NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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