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SN74S479N

Texas Instruments

SN74S479N by Texas Instruments

SN74S479N by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density. Operating b/w 0°C to 70°C, it features TTL technology and a rectangular package style with 24 terminals. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Digiode

USA . 82 parts In-Stock

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82

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 967 parts In-Stock

1+ parts

$3.612

100+ parts

-

1k+ parts

$4.127

10k+ parts

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967

$3.612

-

$4.127

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ChromeModa Solutions

Germany . 5,175 parts In-Stock

1+ parts

$4.058

100+ parts

$3.328

1k+ parts

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5,175

$4.058

$3.328

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IDEA Electronic Components Group

UK . 531 parts In-Stock

1+ parts

$4.058

100+ parts

-

1k+ parts

$3.652

10k+ parts

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531

$4.058

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$3.652

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AZTECH Wire

Italy . 506 parts In-Stock

1+ parts

$9.843

100+ parts

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506

$9.843

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One Stop Electronics

USA . 1,460 parts In-Stock

1+ parts

$22.000

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1,460

$22.000

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DigiPath Technology Company

USA . 1,765 parts In-Stock

1+ parts

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100+ parts

$3.659

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1,765

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$3.659

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Corphita

USA . 771 parts In-Stock

1+ parts

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771

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Overview

Unlock the power of reliable data storage with the SN74S479N by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-notch quality and performance in every product they create. The SN74S479N is an OTP ROM that offers a secure and permanent solution for storing critical information. Ideal for a wide range of applications, this memory IC provides users with peace of mind knowing their data is safe and easily accessible when needed. Trust Texas Instruments to deliver cutting-edge technology that brings value, efficiency, and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the IC, ensuring a longer lifespan for the product.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and mounting in various electronic applications.

No. of Terminals: 24

Sufficient number of terminals for connecting the IC to other components in a circuit.

Package Style (Meter): IN-LINE

In-line package style simplifies the design and layout of the circuit board.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures, suitable for a wide range of applications.

Organization: 1KX8

Organized as 1Kx8, providing a total of 1024 words with a memory width of 8, ideal for storing and retrieving data efficiently.

Minimum Operating Temperature: 0 °C

Can operate at low temperatures as well, ensuring reliability in different environmental conditions.

Terminal Position: DUAL

Dual terminal position for better connectivity and stability in the circuit.

Temperature Grade: COMMERCIAL

Commercial temperature grade suitable for standard electronic applications.

Technology: TTL

Utilizes TTL technology for reliable and fast operation.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for easy soldering and connection to the circuit board.

No. of Words: 1024 words

Total of 1024 words available for data storage.

Memory Width: 8

Memory width of 8 bits per word for efficient data handling.

Terminal Pitch: 2.54 mm

Standard terminal pitch of 2.54 mm for easy integration with other components.

No. of Words Code: 1K

Code for total number of words available which is 1K (1024).

Memory Density: 8192 bit

Memory density of 8192 bits for storing data effectively.

Memory IC Type: OTP ROM

One-Time Programmable Read-Only Memory type for secure and permanent data storage.

Technical Specifications

OTP ROM SN74S479N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S479N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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