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CMS210-200

Texas Instruments

CMS210-200 by Texas Instruments

Texas Instruments' CMS210-200 is a 128KX16 OTP ROM with 131072 words. Operating asynchronously at 5V, it features a max access time of 200ns and memory density of 2097152 bits. Ideal for applications requiring non-volatile memory storage in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,718 parts In-Stock

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Digiode

USA . 2,795 parts In-Stock

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2,795

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Distributors (Availability)

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Parana Technologies

USA . 778 parts In-Stock

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$4.015

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$4.479

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778

$4.015

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$4.479

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DigiPath Technology Company

USA . 1,605 parts In-Stock

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$4.421

100+ parts

$4.067

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$4.421

$4.067

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ChromeModa Solutions

Germany . 4,534 parts In-Stock

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$4.511

100+ parts

$3.699

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$4.511

$3.699

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IDEA Electronic Components Group

UK . 822 parts In-Stock

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$4.511

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$4.060

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822

$4.511

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$4.060

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AZTECH Wire

Italy . 326 parts In-Stock

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$13.889

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326

$13.889

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One Stop Electronics

USA . 435 parts In-Stock

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$29.000

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435

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Northwest PG Solutions

USA . 2,193 parts In-Stock

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Corphita

USA . 1,759 parts In-Stock

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Native Components

USA . 444 parts In-Stock

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Overview

Unlock the power of reliable and high-quality memory solutions with the Texas Instruments CMS210-200 OTP ROM. Designed for asynchronous operation with common input/output type, this versatile microelectronic assembly offers 128Kx16 organization and 3-state output characteristics. Perfect for a wide range of applications, from consumer electronics to industrial machinery, this OTP ROM provides customers with a dependable and efficient solution that ensures seamless performance. Trust in Texas Instruments' reputation for excellence and innovation, and elevate your projects with the value and benefits of the CMS210-200.

Feature Benefit Bullets

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent control of data input and output, leading to efficient performance.

Input/Output Type: COMMON

Common input/output type simplifies the connection process and enhances compatibility with other devices.

Nominal Supply Voltage: 5V

Operating at a stable 5V supply voltage ensures reliable and consistent performance.

No. of Terminals: 60

Having 60 terminals provides ample connectivity options for various applications, increasing versatility.

Maximum Operating Temperature: 55 °C

With a maximum operating temperature of 55°C, this OTP ROM can withstand high temperature environments.

Organization: 128KX16

Organized as 128KX16, this OTP ROM offers a balance between storage capacity and data width, suitable for many applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple devices to share the same output line without interference, enhancing efficiency.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and reliable operation, making it a cost-effective choice.

Maximum Supply Current: 100 mA

Operating with a maximum supply current of 100mA indicates efficient power usage, leading to longer battery life in portable devices.

Memory Density: 2097152 bit

With a memory density of 2097152 bits, this OTP ROM can store a large amount of data, suitable for complex applications.

Technical Specifications

OTP ROM CMS210-200 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

X-XXMA-X60

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

60

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

55 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

CARD60

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.014 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Trade Compliance

CMS210-200 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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