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TBP24SA41JP4

Texas Instruments

TBP24SA41JP4 by Texas Instruments

TBP24SA41JP4 by Texas Instruments is a 1KX4 OTP ROM with 4096-bit memory density and 60 ns max access time. It features TTL technology, operates b/w 0-70°C, and has an IN-LINE package style. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,414 parts In-Stock

1+ parts

-

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-

1k+ parts

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8,414

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Digiode

USA . 2,814 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,814

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 618 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

-

10k+ parts

-

618

$2.000

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-

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Parana Technologies

USA . 1,939 parts In-Stock

1+ parts

$3.495

100+ parts

-

1k+ parts

$4.019

10k+ parts

-

1,939

$3.495

-

$4.019

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DigiPath Technology Company

USA . 279 parts In-Stock

1+ parts

$3.848

100+ parts

-

1k+ parts

-

10k+ parts

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279

$3.848

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ChromeModa Solutions

Germany . 3,883 parts In-Stock

1+ parts

$3.927

100+ parts

$3.220

1k+ parts

-

10k+ parts

-

3,883

$3.927

$3.220

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IDEA Electronic Components Group

UK . 915 parts In-Stock

1+ parts

$3.927

100+ parts

-

1k+ parts

$3.534

10k+ parts

-

915

$3.927

-

$3.534

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AZTECH Wire

Italy . 261 parts In-Stock

1+ parts

$18.764

100+ parts

-

1k+ parts

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10k+ parts

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261

$18.764

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Corphita

USA . 3,006 parts In-Stock

1+ parts

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3,006

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Overview

Unlock the power of reliable and high-quality memory storage with the TBP24SA41JP4 by Texas Instruments. As a trusted leader in semiconductor manufacturing, Texas Instruments delivers exceptional products that meet the needs of various industries. The OTP ROM category of the TBP24SA41JP4 offers unparalleled value and benefits to customers, providing secure and permanent data storage solutions. Whether you're in the automotive, industrial, or consumer electronics sector, this product ensures efficient performance and durability for your applications. Experience the advantages of Texas Instruments technology with the TBP24SA41JP4.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic is a durable and reliable material, ensuring the protection and longevity of the OTP ROM chip inside.

No. of Terminals: 18

Sufficient number of terminals for connecting to various external devices or circuits, providing versatility in usage.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this OTP ROM can function optimally even in demanding environments or conditions.

Technology: TTL

TTL technology provides fast and efficient operation, making this OTP ROM suitable for applications requiring high-speed data processing.

Memory Density: 4096 bit

High memory density allows for storing a significant amount of data in a compact chip, making it suitable for applications with limited space.

Memory IC Type: OTP ROM

OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data written to the memory is permanent and cannot be altered, providing security and reliability.

Maximum Access Time: 60 ns

Low access time ensures quick retrieval of data, making this OTP ROM efficient for applications requiring rapid data access.

Technical Specifications

OTP ROM TBP24SA41JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA41JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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