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5962-01-144-2570

Texas Instruments

5962-01-144-2570 by Texas Instruments

Texas Instruments' 5962-01-144-2570 is a MILITARY-grade OTP ROM with 256X8 organization, 2048-bit memory density, and 75ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,361 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,361

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Digiode

USA . 1,844 parts In-Stock

1+ parts

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1,844

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,361 parts In-Stock

1+ parts

$2.509

100+ parts

$232.990

1k+ parts

$2.258

10k+ parts

-

2,361

$2.509

$232.990

$2.258

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DigiPath Technology Company

USA . 456 parts In-Stock

1+ parts

$2.763

100+ parts

-

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456

$2.763

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ChromeModa Solutions

Germany . 2,557 parts In-Stock

1+ parts

$2.819

100+ parts

$2.312

1k+ parts

-

10k+ parts

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2,557

$2.819

$2.312

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IDEA Electronic Components Group

UK . 412 parts In-Stock

1+ parts

$2.819

100+ parts

-

1k+ parts

$2.537

10k+ parts

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412

$2.819

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$2.537

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AZTECH Wire

Italy . 447 parts In-Stock

1+ parts

$9.805

100+ parts

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447

$9.805

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Native Components

USA . 866 parts In-Stock

1+ parts

$10.650

100+ parts

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866

$10.650

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Northwest PG Solutions

USA . 1,777 parts In-Stock

1+ parts

$11.715

100+ parts

$10.543

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1,777

$11.715

$10.543

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One Stop Electronics

USA . 1,240 parts In-Stock

1+ parts

$24.000

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1,240

$24.000

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Corphita

USA . 2,335 parts In-Stock

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2,335

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Overview

Elevate your projects with the 5962-01-144-2570 by Texas Instruments, a top-of-the-line OTP ROM that offers unparalleled quality and reliability. With military-grade technology and a ceramic package body, this memory IC is perfect for applications requiring high performance in extreme conditions. Trust Texas Instruments' reputation for excellence and choose this OTP ROM for its impressive memory density and fast access time. Experience the value and benefits of this product firsthand and take your projects to the next level with the 5962-01-144-2570.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent protection for the components inside, ensuring durability and longevity for the OTP ROM product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a 5V supply voltage makes this OTP ROM compatible with standard power supplies, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can withstand high temperatures, making it suitable for a wide range of applications.

Organization: 256X8

The organization of 256 words by 8 bits each allows for efficient data storage and retrieval, making this OTP ROM a reliable choice for storing essential information.

Technology: TTL

Utilizing TTL technology ensures compatibility with a variety of systems and devices, making this OTP ROM a versatile option for different applications.

No. of Words: 256 words

Having 256 words available for storage provides ample capacity for storing data, making this OTP ROM suitable for a wide range of use cases.

Memory Density: 2048 bit

With a memory density of 2048 bits, this OTP ROM offers sufficient storage capacity for storing critical data, making it a reliable choice for embedded systems.

Maximum Access Time: 75 ns

The maximum access time of 75 nanoseconds ensures fast read/write operations, enhancing the performance of this OTP ROM in time-sensitive applications.

Technical Specifications

OTP ROM 5962-01-144-2570 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-144-2570 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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