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TBP24S81MJ

Texas Instruments

TBP24S81MJ by Texas Instruments

TBP24S81MJ by Texas Instruments is a 2Kx4 OTP ROM with 8192-bit memory density. Operating at 5V, it has an access time of 85ns and supports parallel mode. Ideal for military applications due to its -55 to 125°C temperature range and ceramic package with dual terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,517 parts In-Stock

1+ parts

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5,517

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Digiode

USA . 3,165 parts In-Stock

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3,165

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Distributors (Availability)

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Parana Technologies

USA . 1,484 parts In-Stock

1+ parts

$4.590

100+ parts

-

1k+ parts

$5.050

10k+ parts

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1,484

$4.590

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$5.050

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DigiPath Technology Company

USA . 1,059 parts In-Stock

1+ parts

$5.054

100+ parts

-

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1,059

$5.054

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ChromeModa Solutions

Germany . 5,750 parts In-Stock

1+ parts

$5.157

100+ parts

$4.229

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5,750

$5.157

$4.229

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IDEA Electronic Components Group

UK . 325 parts In-Stock

1+ parts

$5.157

100+ parts

-

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$4.641

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325

$5.157

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$4.641

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One Stop Electronics

USA . 870 parts In-Stock

1+ parts

$7.000

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870

$7.000

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AZTECH Wire

Italy . 827 parts In-Stock

1+ parts

$11.539

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827

$11.539

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Corphita

USA . 2,681 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TBP24S81MJ by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and performance. Ideal for military-grade applications, this memory IC boasts a 2KX4 organization and lightning-fast access time of just 85ns. With its durable ceramic, glass-sealed package and 5V nominal supply voltage, the TBP24S81MJ ensures seamless operation in even the harshest environments. Trust Texas Instruments to deliver cutting-edge technology that meets your demands for efficiency, reliability, and value.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the ROM, making it reliable for long-term use.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for flexible and independent functioning, making it suitable for various applications where synchronized operation is not required.

Nominal Supply Voltage: 5V

The 5V nominal supply voltage provides stable power to the OTP ROM, ensuring consistent performance.

Temperature Grade: MILITARY

The military-grade temperature tolerance ensures reliable operation in harsh environments, making it suitable for rugged applications.

Memory IC Type: OTP ROM

The OTP ROM type provides non-volatile memory that retains data even when power is turned off, ensuring data integrity and security.

Technical Specifications

OTP ROM TBP24S81MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-GDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX4

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24S81MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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