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5962-01-141-4360

Texas Instruments

5962-01-141-4360 by Texas Instruments

Texas Instruments' 5962-01-141-4360 is a 32X8 OTP ROM with 16 terminals and a supply voltage of 5V. It operates b/w 0 to 70°C, has a max access time of 40ns, and consumes up to 110mA. Ideal for commercial applications requiring reliable memory storage in a rectangular plastic/epoxy package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,237 parts In-Stock

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4,237

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Digiode

USA . 1,300 parts In-Stock

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1,300

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Distributors (Availability)

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Native Components

USA . 862 parts In-Stock

1+ parts

$1.608

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862

$1.608

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Northwest PG Solutions

USA . 2,107 parts In-Stock

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$1.769

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2,107

$1.769

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Parana Technologies

USA . 1,676 parts In-Stock

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$4.018

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$4.482

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$4.018

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$4.482

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DigiPath Technology Company

USA . 1,833 parts In-Stock

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$4.425

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1,833

$4.425

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ChromeModa Solutions

Germany . 5,735 parts In-Stock

1+ parts

$4.515

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$3.702

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5,735

$4.515

$3.702

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IDEA Electronic Components Group

UK . 2,112 parts In-Stock

1+ parts

$4.515

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$4.064

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2,112

$4.515

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$4.064

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AZTECH Wire

Italy . 369 parts In-Stock

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$10.361

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369

$10.361

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One Stop Electronics

USA . 1,595 parts In-Stock

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$20.000

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$20.000

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Corphita

USA . 3,839 parts In-Stock

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Overview

Unlock the power of innovation with the 5962-01-141-4360 by Texas Instruments. This OTP ROM offers reliability and precision, backed by the trusted manufacturer, Texas Instruments. Ideal for a wide range of applications, this product provides unparalleled value with its high performance and efficiency. Experience the benefits of cutting-edge technology and seamless functionality with the 5962-01-141-4360. Elevate your projects to new heights with this top-tier memory IC type.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material is durable and resistant to damage, making this OTP ROM product reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with a wide range of systems and applications, making this OTP ROM versatile and easy to integrate.

No. of Terminals: 16

With 16 terminals, this OTP ROM product offers ample connectivity options for interfacing with other components or systems, enhancing flexibility and functionality.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows this OTP ROM product to function reliably in a variety of environments, ensuring consistent performance under challenging conditions.

Organization: 32X8

The 32X8 organization means that this OTP ROM stores 32 words of 8 bits each, providing sufficient memory capacity for storing essential data and instructions in a compact form factor.

Technology: TTL

Utilizing TTL technology ensures compatibility with TTL logic levels, making this OTP ROM product easy to interface with TTL-based systems and devices.

Maximum Access Time: 40 ns

The fast maximum access time of 40 nanoseconds allows for quick retrieval of data from this OTP ROM, improving overall system performance and responsiveness.

Technical Specifications

OTP ROM 5962-01-141-4360 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-141-4360 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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