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JBP28S45MJ

Texas Instruments

JBP28S45MJ by Texas Instruments

JBP28S45MJ by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates at a max temperature of 125°C and has an access time of 60ns. Ideal for military-grade applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,646 parts In-Stock

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7,646

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Digiode

USA . 1,053 parts In-Stock

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1,053

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PAR Electronics

UK . 1 parts In-Stock

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1

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Distributors (Availability)

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One Stop Electronics

USA . 728 parts In-Stock

1+ parts

$4.000

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728

$4.000

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Parana Technologies

USA . 1,121 parts In-Stock

1+ parts

$4.732

100+ parts

-

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$5.229

10k+ parts

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1,121

$4.732

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$5.229

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DigiPath Technology Company

USA . 1,564 parts In-Stock

1+ parts

$5.211

100+ parts

$4.794

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1,564

$5.211

$4.794

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ChromeModa Solutions

Germany . 6,424 parts In-Stock

1+ parts

$5.317

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$4.360

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6,424

$5.317

$4.360

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IDEA Electronic Components Group

UK . 1,695 parts In-Stock

1+ parts

$5.317

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$4.785

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1,695

$5.317

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$4.785

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AZTECH Wire

Italy . 769 parts In-Stock

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$18.046

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769

$18.046

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Corphita

USA . 4,164 parts In-Stock

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4,164

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Overview

Unlock the power of reliable data storage with the JBP28S45MJ by Texas Instruments. This OTP ROM offers unparalleled quality and precision, thanks to the expertise of its manufacturer. Ideal for military-grade applications, this versatile product boasts a wide range of benefits, from its durable ceramic package to its lightning-fast access time. Trust Texas Instruments to deliver cutting-edge technology that meets your needs, every time. Experience the difference with the JBP28S45MJ.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body provides excellent thermal conductivity and electrical insulation, ensuring reliability and durability in harsh operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes it compatible with a wide range of systems and easy to integrate.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can withstand elevated temperatures without performance degradation.

Memory Density: 4096 bit

High memory density allows for storing a large amount of data in a compact form, making it suitable for applications requiring efficient use of memory space.

Technology: TTL

Using TTL technology ensures fast and reliable data transfer, making it suitable for applications that require high-speed operation.

Technical Specifications

OTP ROM JBP28S45MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

JBP28S45MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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