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JBP28L86MJ

Texas Instruments

JBP28L86MJ by Texas Instruments

JBP28L86MJ by Texas Instruments is a MILITARY-grade OTP ROM with 1KX8 organization, 8192-bit memory density, and 175 ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,720 parts In-Stock

1+ parts

-

100+ parts

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2,720

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Digiode

USA . 1,583 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,583

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 891 parts In-Stock

1+ parts

$2.646

100+ parts

-

1k+ parts

$3.136

10k+ parts

-

891

$2.646

-

$3.136

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DigiPath Technology Company

USA . 1,627 parts In-Stock

1+ parts

$2.914

100+ parts

-

1k+ parts

-

10k+ parts

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1,627

$2.914

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IDEA Electronic Components Group

UK . 1,140 parts In-Stock

1+ parts

$2.973

100+ parts

-

1k+ parts

$2.676

10k+ parts

-

1,140

$2.973

-

$2.676

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ChromeModa Solutions

Germany . 873 parts In-Stock

1+ parts

$2.973

100+ parts

$2.438

1k+ parts

-

10k+ parts

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873

$2.973

$2.438

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AZTECH Wire

Italy . 700 parts In-Stock

1+ parts

$7.459

100+ parts

-

1k+ parts

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700

$7.459

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One Stop Electronics

USA . 294 parts In-Stock

1+ parts

$29.000

100+ parts

-

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294

$29.000

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Corphita

USA . 3,750 parts In-Stock

1+ parts

-

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3,750

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Overview

Upgrade your electronic projects with the JBP28L86MJ by Texas Instruments, a reliable OTP ROM memory chip that offers unparalleled quality and performance. Manufactured by a trusted industry leader, this versatile component is perfect for a wide range of applications, from automotive systems to industrial automation. With its advanced technology and durable construction, this memory chip ensures fast access times and secure data storage. Trust Texas Instruments for superior products that deliver value and efficiency to all your designs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides high durability and reliability, making the product suitable for rugged environments.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V ensures compatibility with most standard electronic systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to function reliably in a wide range of environmental conditions.

Organization: 1KX8

The organization of 1KX8 provides a good balance between memory capacity and data width, suitable for many applications.

Technology: TTL

TTL technology offers fast performance and compatibility with a wide range of TTL-based systems.

Memory Density: 8192 bit

The high memory density allows for storing a large amount of data in a compact form factor.

Memory IC Type: OTP ROM

The OTP ROM type ensures that the memory is programmable only once, making it secure and ideal for storing critical data.

Maximum Access Time: 175 ns

The fast access time ensures quick retrieval of data, improving overall system performance.

Technical Specifications

OTP ROM JBP28L86MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

175 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP28L86MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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