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JBP28S46MJ

Texas Instruments

JBP28S46MJ by Texas Instruments

The Texas Instruments JBP28S46MJ is a 512x8 OTP ROM with 4096-bit memory density. It operates at temperatures from -55 to 125°C, with a max access time of 70ns. Ideal for military applications requiring reliable data storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,790

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-

-

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Vyrian

USA . 2,968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,968

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,387 parts In-Stock

1+ parts

$3.386

100+ parts

-

1k+ parts

$3.913

10k+ parts

-

1,387

$3.386

-

$3.913

-

DigiPath Technology Company

USA . 1,477 parts In-Stock

1+ parts

$3.729

100+ parts

$3.431

1k+ parts

-

10k+ parts

-

1,477

$3.729

$3.431

-

-

ChromeModa Solutions

Germany . 4,351 parts In-Stock

1+ parts

$3.805

100+ parts

$3.120

1k+ parts

-

10k+ parts

-

4,351

$3.805

$3.120

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-

IDEA Electronic Components Group

UK . 2,295 parts In-Stock

1+ parts

$3.805

100+ parts

-

1k+ parts

$3.424

10k+ parts

-

2,295

$3.805

-

$3.424

-

One Stop Electronics

USA . 291 parts In-Stock

1+ parts

$4.000

100+ parts

-

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-

10k+ parts

-

291

$4.000

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-

-

AZTECH Wire

Italy . 618 parts In-Stock

1+ parts

$8.810

100+ parts

-

1k+ parts

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10k+ parts

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618

$8.810

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Corphita

USA . 4,226 parts In-Stock

1+ parts

-

100+ parts

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4,226

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Overview

Experience unparalleled quality and reliability with the Texas Instruments JBP28S46MJ OTP ROM. Crafted by a renowned manufacturer, this product offers exceptional performance in a wide range of applications. With a military-grade temperature rating and advanced technology, it ensures optimal functionality even in harsh environments. Trust in the 512X8 memory density and fast access time of 70 ns for seamless operation. Elevate your projects with the value and benefits that this top-tier product brings, setting you apart from the competition.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides good thermal insulation and protection, enhancing the overall durability and reliability of the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power supplies, making this OTP ROM easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM is suitable for use in a wide range of environments and applications.

Organization: 512X8

The 512x8 organization provides a good balance between storage capacity and data access speed, making this OTP ROM efficient for various computing tasks.

Technology: TTL

TTL technology ensures high-speed operation and compatibility with a wide range of digital systems, making this OTP ROM versatile and reliable.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) type, this memory chip is ideal for storing permanent data that does not need to be reprogrammed.

Maximum Access Time: 70 ns

With a fast maximum access time of 70 ns, this OTP ROM provides quick data retrieval, enhancing overall system performance.

Technical Specifications

OTP ROM JBP28S46MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP28S46MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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