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5962-01-158-9148

Texas Instruments

5962-01-158-9148 by Texas Instruments

Texas Instruments' 5962-01-158-9148 is a MILITARY-grade OTP ROM with 1KX4 organization, 4096-bit memory density, and 75 ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,754 parts In-Stock

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6,754

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Digiode

USA . 4,445 parts In-Stock

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4,445

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Distributors (Availability)

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Native Components

USA . 606 parts In-Stock

1+ parts

$0.030

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-

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$0.029

606

$0.030

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$0.029

Parana Technologies

USA . 1,598 parts In-Stock

1+ parts

$2.455

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-

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$2.948

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1,598

$2.455

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$2.948

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DigiPath Technology Company

USA . 1,679 parts In-Stock

1+ parts

$2.703

100+ parts

$2.487

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1,679

$2.703

$2.487

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ChromeModa Solutions

Germany . 4,573 parts In-Stock

1+ parts

$2.758

100+ parts

$2.262

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4,573

$2.758

$2.262

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IDEA Electronic Components Group

UK . 655 parts In-Stock

1+ parts

$2.758

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$2.482

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655

$2.758

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$2.482

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One Stop Electronics

USA . 810 parts In-Stock

1+ parts

$9.000

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810

$9.000

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AZTECH Wire

Italy . 629 parts In-Stock

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$9.913

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629

$9.913

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Supply Digital

USA . 2,089 parts In-Stock

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Corphita

USA . 2,073 parts In-Stock

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Northwest PG Solutions

USA . 1,844 parts In-Stock

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Overview

Unlock the power of advanced technology with the 5962-01-158-9148 by Texas Instruments. This OTP ROM offers unparalleled quality and reliability, thanks to its ceramic package body and military temperature grade. With a memory density of 4096 bits and a lightning-fast maximum access time of 75 ns, this versatile component is perfect for a wide range of applications. Whether you're working on aerospace systems or industrial equipment, Texas Instruments delivers cutting-edge solutions that exceed expectations. Upgrade your projects with the 5962-01-158-9148 and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity, making the product suitable for operating in extreme temperature conditions without affecting performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supplies, offering ease of integration into various systems.

No. of Words: 1024 words

Having a high number of words allows for storing a larger amount of data in the memory, making the product versatile in applications requiring more storage capacity.

Technology: TTL

Using TTL technology ensures reliable and fast operation, making the OTP ROM a dependable choice for applications where speed and accuracy are crucial.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can function reliably in harsh environments or applications that require extended operation in elevated temperatures.

Technical Specifications

OTP ROM 5962-01-158-9148 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-158-9148 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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