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M27C2001-10B1

STMicroelectronics

M27C2001-10B1 by STMicroelectronics

M27C2001-10B1 by STMicroelectronics is a 256KX8 OTP ROM with 3-STATE output, operating at 5V. It features a max access time of 100ns and memory density of 2097152 bits. Commonly used in applications requiring non-volatile memory storage with parallel interface.

Median Price

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Lifecycle Status

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Vyrian

USA . 7,324 parts In-Stock

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Digiode

USA . 1,737 parts In-Stock

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Anansix

USA . 1,318 parts In-Stock

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Bristol Electronics

USA . 196 parts In-Stock

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R&J Components

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ABC Electronics Ltd.

UK . 132 parts In-Stock

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Pegasus Components GmbH

Germany . 69 parts In-Stock

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MRC Electronics

USA . 12 parts In-Stock

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Electronics Depot

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Cyclops Electronics Ltd

UK . 12 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9 parts In-Stock

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Holdelec - ElecDif-Pro

France . 9 parts In-Stock

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Q Components

USA . 1 parts In-Stock

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Ampacity Inc.

Singapore . 528 parts In-Stock

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$3.000

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528

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Aztec Data Supply Inc.

USA . 2,715 parts In-Stock

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$3.700

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$3.700

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IDEA Electronic Components Group

UK . 1,677 parts In-Stock

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$4.317

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$3.885

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Corohmni

South Africa . 682 parts In-Stock

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$5.422

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Semicontronic

India . 2,116 parts In-Stock

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$7.000

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$6.825

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$6.790

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MKK Technologies

India . 1,227 parts In-Stock

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$8.117

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DigiPath Technology Company

USA . 1,227 parts In-Stock

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AZTECH Wire

Italy . 615 parts In-Stock

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Microchip USA

USA . 405 parts In-Stock

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Lixinc

USA . 16,297 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 6,120 parts In-Stock

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Continental Prestige Electronics

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Alle Elektronik GmbH

Germany . 4,080 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Parana Technologies

USA . 494 parts In-Stock

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Corphita

USA . 323 parts In-Stock

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ChipstoGo Electronic ltd

UK . 33 parts In-Stock

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Assy Fe

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Overview

Unlock the power of reliable data storage with the M27C2001-10B1 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers high-quality OTP ROM solutions that offer unmatched value and performance. Ideal for a wide range of applications, this memory IC provides fast access times, low standby current, and a wide operating temperature range. Trust STMicroelectronics to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the OTP ROM, ensuring a longer product lifespan.

Operating Mode: ASYNCHRONOUS

ASYNCHRONOUS operation allows for efficient and independent read/write operations, enhancing the speed and performance of the OTP ROM.

No. of Terms: 32

Having 32 terminals allows for versatile connectivity options and compatibility with various systems, making it a versatile product.

Memory Width: 8

With a memory width of 8, this OTP ROM has a high data transfer rate and can handle large volumes of data efficiently.

Maximum Access Time: 100 ns

The low access time of 100 ns ensures quick response and data retrieval, making this OTP ROM suitable for time-sensitive applications.

Technical Specifications

OTP ROM M27C2001-10B1 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

41.91 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C2001-10B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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