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STMicroelectronics OTP ROM 106

OTP ROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width Write Protection
M27C256B-12B1 by STMicroelectronics

M27C256B-12B1

STMicroelectronics

STMicroelectronics M27C256B-12B1 is a 32KX8 OTP ROM with 120ns access time, operating at 5V. It features 3-STATE output and supports parallel interface. Commonly used in commercial applications requiring non-volatile memory storage.

120 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-12C1 by STMicroelectronics

M27C256B-12C1

STMicroelectronics

M27C256B-12C1 by STMicroelectronics is a 32KX8 OTP ROM with 3-STATE output, operating at 5V. It features a programming voltage of 12.75V and has an access time of 120ns. Commonly used in commercial applications requiring non-volatile memory storage with parallel interface.

120 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C256B-12C6 by STMicroelectronics

M27C256B-12C6

STMicroelectronics

STMicroelectronics M27C256B-12C6 is a 32KX8 OTP ROM with 3-STATE output, operating at 5V. It features a programming voltage of 12.75V and has an access time of 120ns. Commonly used in industrial applications requiring reliable non-volatile memory storage.

120 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C256B-15B1 by STMicroelectronics

M27C256B-15B1

STMicroelectronics

STMicroelectronics M27C256B-15B1 is a 32Kx8 OTP ROM with 150ns access time, operating at 5V. It features 3-state output and asynchronous mode, suitable for commercial applications requiring reliable non-volatile memory storage.

150 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-15C1 by STMicroelectronics

M27C256B-15C1

STMicroelectronics

STMicroelectronics M27C256B-15C1 is a 32KX8 OTP ROM with 150 ns access time, operating at 5V. It features 3-STATE output and supports parallel interface. Commonly used in commercial applications requiring non-volatile memory storage.

150 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C256B-90B1 by STMicroelectronics

M27C256B-90B1

STMicroelectronics

M27C256B-90B1 by STMicroelectronics is a 32KX8 OTP ROM with 262144 bit memory density. It operates at 5V, has an access time of 90ns, and supports asynchronous mode. Commonly used in commercial applications requiring non-volatile memory storage.

90 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-90C1 by STMicroelectronics

M27C256B-90C1

STMicroelectronics

M27C256B-90C1 by STMicroelectronics is a 32KX8 OTP ROM chip with 3-STATE output, operating at 5V. It features a max access time of 90ns and is ideal for applications requiring non-volatile memory storage in commercial temperature environments. The package style is CHIP CARRIER with dimensions of 13.97mm x 11.43mm x 3.56mm, making it suitable for surface mount designs.

90 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M87C257-15C1 by STMicroelectronics

M87C257-15C1

STMicroelectronics

M87C257-15C1 by STMicroelectronics is a 32Kx8 OTP ROM chip with 3-STATE output, operating at 5V. It has a max access time of 150ns and is ideal for applications requiring non-volatile memory storage in commercial-grade devices.

150 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M87C257-15C6 by STMicroelectronics

M87C257-15C6

STMicroelectronics

M87C257-15C6 by STMicroelectronics is a 32Kx8 OTP ROM chip with 3-STATE output, operating at 5V. It features a max access time of 150ns and is designed for industrial temperature applications. With a memory density of 262144 bits, this rectangular chip carrier package is suitable for various parallel data storage needs.

150 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C2001-10C1 by STMicroelectronics

M27C2001-10C1

STMicroelectronics

STMicroelectronics M27C2001-10C1 is a 256Kx8 OTP ROM with 100ns access time, operating at 5V. It features 3-STATE output and supports asynchronous mode. Commonly used in commercial applications requiring non-volatile memory storage.

100 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.4554 mm

M27C2001-10C6 by STMicroelectronics

M27C2001-10C6

STMicroelectronics

M27C2001-10C6 by STMicroelectronics is a 256KX8 OTP ROM chip with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Commonly used in industrial applications requiring non-volatile memory storage.

100 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.4554 mm

M27C2001-12C1 by STMicroelectronics

M27C2001-12C1

STMicroelectronics

M27C2001-12C1 by STMicroelectronics is a 256KX8 OTP ROM chip with 3-STATE output, operating at 5V. It has a max access time of 120ns and memory density of 2Mbit. Commonly used in commercial applications requiring non-volatile memory storage with parallel interface.

120 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.4554 mm

M27C2001-55C1 by STMicroelectronics

M27C2001-55C1

STMicroelectronics

STMicroelectronics M27C2001-55C1 is a 256KX8 OTP ROM with 55 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable non-volatile memory storage in a compact chip carrier package.

55 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.4554 mm

M27C2001-70C1 by STMicroelectronics

M27C2001-70C1

STMicroelectronics

OTP ROM; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

70 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.4554 mm

M27C2001-70C6TR by STMicroelectronics

M27C2001-70C6TR

STMicroelectronics

STMicroelectronics M27C2001-70C6TR is a 256Kx8 OTP ROM chip with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Commonly used in applications requiring non-volatile memory storage with parallel interface.

70 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.4554 mm

M27C2001-70C6 by STMicroelectronics

M27C2001-70C6

STMicroelectronics

M27C2001-70C6 by STMicroelectronics is a 256Kx8 OTP ROM with 70ns access time, operating at 5V. It features a 3-STATE output and industrial temperature grade. Commonly used in applications requiring non-volatile memory storage in harsh environments.

70 ns

COMMON

R-PQCC-J32

e3

13.995 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

10

11.4554 mm

M27C256B-10C6 by STMicroelectronics

M27C256B-10C6

STMicroelectronics

M27C256B-10C6 by STMicroelectronics is a 32KX8 OTP ROM chip with 3-STATE output, operating at 5V. It has a max access time of 100ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular chip carrier package.

100 ns

12.75V PROGRAMMING VOLTAGE

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C256B-70C1 by STMicroelectronics

M27C256B-70C1

STMicroelectronics

STMicroelectronics M27C256B-70C1 is a 32Kx8 OTP ROM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and parallel interface. Commonly used in commercial applications for storing fixed data due to its high memory density and low standby current consumption.

70 ns

12.75V PROGRAMMING VOLTAGE

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4002-10B1 by STMicroelectronics

M27C4002-10B1

STMicroelectronics

STMicroelectronics M27C4002-10B1 is a 256KX16 OTP ROM with 100ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring reliable non-volatile memory storage in a rectangular package.

100 ns

COMMON

R-PDIP-T40

e3

52.18 mm

4194304 bit

OTP ROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

DIP

DIP40,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-10C1TR by STMicroelectronics

M27C4002-10C1TR

STMicroelectronics

OTP ROM; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Package Equivalence Code: LDCC44,.7SQ;

100 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27C4002-10C1 by STMicroelectronics

M27C4002-10C1

STMicroelectronics

M27C4002-10C1 by STMicroelectronics is a 256Kx16 OTP ROM with 100ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Commonly used in commercial applications requiring non-volatile memory storage.

100 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27C4002-12C1 by STMicroelectronics

M27C4002-12C1

STMicroelectronics

M27C4002-12C1 by STMicroelectronics is a 256Kx16 OTP ROM with 120ns access time, operating at 5V. It features a 44-terminal chip carrier package and supports asynchronous operation. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

120 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27C4002-80C6TR by STMicroelectronics

M27C4002-80C6TR

STMicroelectronics

OTP ROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; JESD-609 Code: e3;

80 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27C4002-80C6 by STMicroelectronics

M27C4002-80C6

STMicroelectronics

M27C4002-80C6 by STMicroelectronics is a 256KX16 OTP ROM with 80 ns access time, operating at 5V. It features a 44-terminal chip carrier package suitable for industrial applications. With a memory density of 4Mbit and parallel interface, it offers common I/O type and 3-STATE output characteristics.

80 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

245

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27C4002-90C1 by STMicroelectronics

M27C4002-90C1

STMicroelectronics

M27C4002-90C1 by STMicroelectronics is a 256Kx16 OTP ROM chip with 90 ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Commonly used in commercial applications requiring non-volatile memory storage.

90 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27C512-12B1 by STMicroelectronics

M27C512-12B1

STMicroelectronics

M27C512-12B1 by STMicroelectronics is a 64KX8 OTP ROM with 120 ns access time, operating at 5V. It features a 3-STATE output and is ideal for applications requiring non-volatile memory storage in commercial temperature environments. With a memory density of 524288 bit, this CMOS technology-based device offers reliable performance in a rectangular plastic/epoxy package.

120 ns

COMMON

R-PDIP-T28

e0

36.83 mm

524288 bit

OTP ROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-15B1 by STMicroelectronics

M27C512-15B1

STMicroelectronics

M27C512-15B1 by STMicroelectronics is a 64KX8 OTP ROM with 150ns access time, operating at 5V. It features a 3-STATE output and operates in parallel mode. Commonly used in commercial applications, this CMOS technology memory chip has a memory density of 524288 bits.

150 ns

COMMON

R-PDIP-T28

36.83 mm

524288 bit

OTP ROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-15B6 by STMicroelectronics

M27C512-15B6

STMicroelectronics

M27C512-15B6 by STMicroelectronics is a 64KX8 OTP ROM with 150 ns access time, operating at 5V. It features a 3-STATE output and is designed for industrial applications requiring reliable non-volatile memory storage. The device has a package style of IN-LINE and operates in parallel mode with a memory density of 524288 bits.

150 ns

COMMON

R-PDIP-T28

e0

36.83 mm

524288 bit

OTP ROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-90B1 by STMicroelectronics

M27C512-90B1

STMicroelectronics

The STMicroelectronics M27C512-90B1 is a 64KX8 OTP ROM with 3-STATE output, operating at 5V. It has a max access time of 90ns and memory density of 524288 bits. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

90 ns

COMMON

R-PDIP-T28

e0

36.83 mm

524288 bit

OTP ROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-90B6 by STMicroelectronics

M27C512-90B6

STMicroelectronics

STMicroelectronics M27C512-90B6 is a 64KX8 OTP ROM with 90 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

90 ns

COMMON

R-PDIP-T28

e3

36.83 mm

524288 bit

OTP ROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-10C6TR by STMicroelectronics

M27C512-10C6TR

STMicroelectronics

M27C512-10C6TR by STMicroelectronics is a 64KX8 OTP ROM with 100 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range (-40 to 85 °C). Commonly used for memory storage applications due to its high density and parallel interface.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-10C6 by STMicroelectronics

M27C512-10C6

STMicroelectronics

M27C512-10C6 by STMicroelectronics is a 64Kx8 OTP ROM with a max access time of 100 ns, operating at 5V. It features a quad terminal form and operates in an industrial temperature range from -40 °C to 85°C. Ideal for applications requiring reliable data storage in compact designs.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-12C1 by STMicroelectronics

M27C512-12C1

STMicroelectronics

STMicroelectronics M27C512-12C1 is a 64KX8 OTP ROM with 120ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-12C6 by STMicroelectronics

M27C512-12C6

STMicroelectronics

M27C512-12C6 by STMicroelectronics is a 64KX8 OTP ROM with 120 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range (-40 to 85 °C). Commonly used for memory storage applications due to its high density and parallel interface.

120 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-15C1 by STMicroelectronics

M27C512-15C1

STMicroelectronics

M27C512-15C1 by STMicroelectronics is a 64KX8 OTP ROM chip with 150 ns access time and 3-STATE output. Operating at 5V, it has a memory density of 524288 bit and is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

COMMON

R-PQCC-J32

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-45C1 by STMicroelectronics

M27C512-45C1

STMicroelectronics

M27C512-45C1 by STMicroelectronics is a 64KX8 OTP ROM chip with 45 ns access time and 3-STATE output. Operating at 5V, it has a memory density of 524288 bit and is ideal for applications requiring fast read/write speeds in commercial temperature environments.

45 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-70C1 by STMicroelectronics

M27C512-70C1

STMicroelectronics

M27C512-70C1 by STMicroelectronics is a 64Kx8 OTP ROM with a max access time of 70 ns, operating at 5V. It features a rectangular chip carrier package and supports asynchronous operation. Ideal for commercial applications requiring reliable memory storage.

70 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-70C6TR by STMicroelectronics

M27C512-70C6TR

STMicroelectronics

STMicroelectronics M27C512-70C6TR is a 64KX8 OTP ROM chip with 70 ns access time, operating at 5V. It features a 32-terminal chip carrier package and supports asynchronous operation. Ideal for industrial applications requiring non-volatile memory storage in compact form factors.

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-70C6 by STMicroelectronics

M27C512-70C6

STMicroelectronics

M27C512-70C6 by STMicroelectronics is a 64KX8 OTP ROM with 70 ns access time, operating at 5V. It features a 3-STATE output and is designed for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

70 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-90C1TR by STMicroelectronics

M27C512-90C1TR

STMicroelectronics

M27C512-90C1TR by STMicroelectronics is a 64Kx8 OTP ROM with a max access time of 90 ns, operating at a nominal voltage of 5V. It features a quad terminal position and operates asynchronously. Ideal for commercial applications requiring reliable memory storage.

90 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-90C1 by STMicroelectronics

M27C512-90C1

STMicroelectronics

M27C512-90C1 by STMicroelectronics is a 64KX8 OTP ROM chip with 90 ns access time, operating at 5V. It features a 3-STATE output and is designed for parallel operation in commercial temperature grade applications. The package style is chip carrier with dimensions of 13.97mm x 11.43mm x 3.56mm, making it suitable for various memory storage needs.

90 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C512-90C6 by STMicroelectronics

M27C512-90C6

STMicroelectronics

M27C512-90C6 by STMicroelectronics is a 64KX8 OTP ROM with 90 ns access time and operates at 5V. It features a 3-STATE output, industrial temperature grade, and parallel interface. Commonly used in applications requiring non-volatile memory storage with fast read speeds.

90 ns

COMMON

R-PQCC-J32

e0

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-10B1 by STMicroelectronics

M27C4001-10B1

STMicroelectronics

M27C4001-10B1 by STMicroelectronics is a 512Kx8 OTP ROM with 100ns access time, operating at 5V. It features a 3-STATE output and operates in parallel mode. Commonly used in commercial applications requiring non-volatile memory storage.

100 ns

COMMON

R-PDIP-T32

e3

42.035 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-12B1 by STMicroelectronics

M27C4001-12B1

STMicroelectronics

M27C4001-12B1 by STMicroelectronics is a 512KX8 OTP ROM with 100ns access time, operating at 5V. It features a 32-terminal IN-LINE package and supports asynchronous operation. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

100 ns

COMMON

R-PDIP-T32

e3

42.035 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-80B1 by STMicroelectronics

M27C4001-80B1

STMicroelectronics

M27C4001-80B1 by STMicroelectronics is a 512KX8 OTP ROM with 80 ns access time, operating at 5V. It features 3-STATE output characteristics and has a memory density of 4Mbit. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

80 ns

COMMON

R-PDIP-T32

e3

42.035 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C160-100B1 by STMicroelectronics

M27C160-100B1

STMicroelectronics

M27C160-100B1 by STMicroelectronics is a 1MX16 OTP ROM with 16-bit memory width and 1048576 words. It operates at 5V, has a max access time of 100ns, and features a package style of IN-LINE. Commonly used in commercial applications requiring non-volatile memory storage with fast read speeds.

100 ns

CONFIGURABLE AS 1M X 16

8

COMMON

R-PDIP-T42

e3

52.455 mm

16777216 bit

OTP ROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C160-90B1 by STMicroelectronics

M27C160-90B1

STMicroelectronics

STMicroelectronics M27C160-90B1 is a 1MX16 OTP ROM with 90 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable non-volatile memory storage in a rectangular plastic package.

90 ns

CONFIGURABLE AS 1M X 16

8

COMMON

R-PDIP-T42

e3

52.455 mm

16777216 bit

OTP ROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-80N6 by STMicroelectronics

M27C4001-80N6

STMicroelectronics

M27C4001-80N6 by STMicroelectronics is a 512KX8 OTP ROM with 80 ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in harsh environments.

80 ns

COMMON

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

8 mm