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M27C512-90B6

STMicroelectronics

M27C512-90B6 by STMicroelectronics

STMicroelectronics M27C512-90B6 is a 64KX8 OTP ROM with 90 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

Median Price

$1.888

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Nova Conductors

Japan . 71 parts In-Stock

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$1.888

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Vyrian

USA . 3,785 parts In-Stock

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Digiode

USA . 2,169 parts In-Stock

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Chip Stock

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Anansix

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Euro-Tech

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J2 Sourcing AB

Sweden . 29 parts In-Stock

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PC Components Company LLC

USA . 8 parts In-Stock

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Bristol Electronics

USA . 8 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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NAC Semi

USA . 1 parts In-Stock

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Continental Prestige Electronics

USA . 6,162 parts In-Stock

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$1.888

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$1.850

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$1.850

Argo Parts USA

USA . 3,732 parts In-Stock

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$1.888

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IDEA Electronic Components Group

UK . 1,587 parts In-Stock

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$1.995

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$1.796

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Corohmni

South Africa . 181 parts In-Stock

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$2.578

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Semicontronic

India . 228 parts In-Stock

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$3.000

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$2.925

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$2.910

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MKK Technologies

India . 998 parts In-Stock

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$3.752

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$3.752

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DigiPath Technology Company

USA . 998 parts In-Stock

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$3.752

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Aztec Data Supply Inc.

USA . 1,113 parts In-Stock

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$3.810

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$5.539

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$5.262

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$5.262

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Microchip USA

USA . 278 parts In-Stock

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$8.839

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Ampacity Inc.

Singapore . 199 parts In-Stock

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$9.000

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AZTECH Wire

Italy . 408 parts In-Stock

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Kepictronics

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Lixinc

USA . 16,995 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,298 parts In-Stock

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Corphita

USA . 4,866 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,865 parts In-Stock

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Parana Technologies

USA . 1,974 parts In-Stock

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Perfect Parts

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Assy Fe

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iodParts Technologies Inc.

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Overview

Unlock the power of reliable data storage with the M27C512-90B6 by STMicroelectronics. Designed with precision and expertise, this OTP ROM offers unparalleled quality and performance for a variety of industrial applications. With a wide operating temperature range and low standby current, this product ensures optimal functionality even in challenging environments. Trust STMicroelectronics to provide you with cutting-edge technology that delivers value, efficiency, and peace of mind. Choose the M27C512-90B6 for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the OTP ROM chip, ensuring it can withstand varying environmental conditions.

Maximum Operating Temperature: 85 °C

The OTP ROM chip can operate reliably in high-temperature environments, making it suitable for industrial use.

Organization: 64KX8

This organization allows for efficient storage and retrieval of data, making the OTP ROM chip suitable for use in applications requiring large memory capacity.

No. of Words: 65536 words

With a high number of words, the OTP ROM chip can store a large amount of data, providing ample storage capacity for various applications.

Technology: CMOS

The CMOS technology used in this OTP ROM chip enables low power consumption and high speed operation, making it energy-efficient and fast.

Maximum Access Time: 90 ns

The fast access time ensures quick retrieval of data from the OTP ROM chip, making it suitable for applications requiring rapid data access.

Technical Specifications

OTP ROM M27C512-90B6 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C512-90B6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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