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TBP18SA030N3

Texas Instruments

TBP18SA030N3 by Texas Instruments

TBP18SA030N3 by Texas Instruments is a 32x8 OTP ROM with 5V supply, 16 terminals, and 40ns access time. It is used in commercial applications for storing non-volatile data efficiently. The package style is in-line rectangular with through-hole terminals, suitable for various TTL technology-based projects.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,359 parts In-Stock

1+ parts

-

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4,359

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Digiode

USA . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 549 parts In-Stock

1+ parts

$4.033

100+ parts

-

1k+ parts

$4.497

10k+ parts

-

549

$4.033

-

$4.497

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ChromeModa Solutions

Germany . 3,994 parts In-Stock

1+ parts

$4.532

100+ parts

$3.716

1k+ parts

-

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3,994

$4.532

$3.716

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IDEA Electronic Components Group

UK . 254 parts In-Stock

1+ parts

$4.532

100+ parts

-

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$4.079

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254

$4.532

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$4.079

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AZTECH Wire

Italy . 419 parts In-Stock

1+ parts

$16.998

100+ parts

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419

$16.998

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One Stop Electronics

USA . 425 parts In-Stock

1+ parts

$17.000

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425

$17.000

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Corphita

USA . 2,724 parts In-Stock

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2,724

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DigiPath Technology Company

USA . 1,299 parts In-Stock

1+ parts

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100+ parts

$4.086

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1,299

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$4.086

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Overview

Discover the innovative TBP18SA030N3 by Texas Instruments, a high-quality OTP ROM chip perfect for a variety of applications. With Texas Instruments' renowned reputation for excellence in manufacturing, this versatile product offers customers reliable performance and value. Whether you're looking to store critical data or improve system efficiency, this OTP ROM chip provides the speed and reliability you need. Upgrade your technology with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, which is ideal for portable and long-lasting applications.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making integration and operation easier.

No. of Terminals: 16

Having 16 terminals allows for sufficient connectivity options and flexibility in circuit design.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand moderate heat levels, increasing its reliability in various environments.

Organization: 32X8

The 32X8 organization offers a good balance between storage capacity and data access efficiency, suitable for many applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures proper functionality even in lower temperature conditions.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and reliable connections, reducing the risk of disconnections or malfunction.

No. of Words: 32

The 32 words memory capacity allows for storing a moderate amount of data, suitable for various types of programs or information.

Memory Width: 8

Having a memory width of 8 increases the efficiency of data transfer and processing, improving overall performance.

Maximum Access Time: 40 ns

The maximum access time of 40 nanoseconds ensures fast retrieval of data, enhancing the speed and responsiveness of the product.

Technical Specifications

OTP ROM TBP18SA030N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP18SA030N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-21-898-6944, 5962218986944

NIIN

218986944

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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