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SN74S470N

Texas Instruments

SN74S470N by Texas Instruments

SN74S470N by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and consumes up to 155mA. Ideal for commercial applications requiring non-volatile memory storage in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,638 parts In-Stock

1+ parts

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4,638

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Vyrian

USA . 3,386 parts In-Stock

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3,386

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Pegasus Components GmbH

Germany . 23 parts In-Stock

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23

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 927 parts In-Stock

1+ parts

$3.257

100+ parts

-

1k+ parts

$3.780

10k+ parts

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927

$3.257

-

$3.780

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ChromeModa Solutions

Germany . 4,662 parts In-Stock

1+ parts

$3.659

100+ parts

$3.000

1k+ parts

-

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4,662

$3.659

$3.000

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IDEA Electronic Components Group

UK . 1,345 parts In-Stock

1+ parts

$3.659

100+ parts

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1k+ parts

$3.293

10k+ parts

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1,345

$3.659

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$3.293

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AZTECH Wire

Italy . 604 parts In-Stock

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$9.127

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604

$9.127

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One Stop Electronics

USA . 1,327 parts In-Stock

1+ parts

$20.000

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1,327

$20.000

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Corphita

USA . 1,825 parts In-Stock

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1,825

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DigiPath Technology Company

USA . 159 parts In-Stock

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$3.299

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159

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$3.299

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Overview

Unlock the power of reliable data storage with the SN74S470N by Texas Instruments. Manufactured with the highest quality standards, this OTP ROM offers unmatched performance and durability. Ideal for a wide range of applications, from consumer electronics to industrial automation, this product provides unparalleled value and benefits to customers. Trust Texas Instruments for superior technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the OTP ROM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this OTP ROM compatible with a wide range of systems and applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function effectively in various environmental conditions without overheating.

Organization: 256X8

The 256X8 organization allows for the storage of 256 words, each with a width of 8 bits, providing ample memory capacity for storing data and instructions.

Technology: TTL

TTL technology ensures fast and reliable data transfer within the OTP ROM, making it suitable for applications that require quick access times and low power consumption.

Memory Density: 2048 bit

With a memory density of 2048 bits, this OTP ROM offers sufficient storage capacity for storing critical data and program code.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data written to the memory is permanent and cannot be altered, making it ideal for secure applications.

Maximum Access Time: 70 ns

The maximum access time of 70 nanoseconds allows for quick retrieval of data from the OTP ROM, making it suitable for applications that require high-speed operation.

Technical Specifications

OTP ROM SN74S470N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S470N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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